JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.33.3-8L Plastic-Encapsulate MOSFETS CJAB 60N03 N-Channel Power MOSFET R MAX I V D (BR)DSS DS(on) PDFNWB3.33.3-8L 10V 4.2m 30V 60A 7.3m 4.5V DESCRIPTION The CJAB60N03 uses advanced trench technology and design to provide excellent R with low gate charge. It can be used in a DS(ON) wide variety of applications FEATURES Battery switch Good stability and uniformity with high E AS Load switch Excellent package for good heat dissipation High density cell design for ultra low R Special process technology for high ESD DS(ON) Fully characterized avalanche voltage and capability current APPLICATIONS SMPS and general purpose applications Uninterruptible Power Supply Hard switched and high frequency circuits MARKING EQUIVALENT CIRCUIT D D D D 8 7 6 5 CJAB60N03 = Part No. CJAB Solid dot=Pin1 indicator 60N03 XX XX=Date Code 1 2 3 4 S S S G ABSOLUTE MAXIMUM RATINGS (T =25 unless otherwise noted) a Parameter Symbol Value Unit Drain-Source Voltage V 30 DS V Gate-Source Voltage V 20 GS Continuous Drain Current I 60 D A I 240 Pulsed Drain Current DM Maximum Power Dissipation P 1.5 W D Single Pulsed Avalanche Energy 420 E mJ AS 83.3 Thermal Resistance from Junction to Ambient R JA /W Junction Temperature T 150 J Storage Temperature T -55~ +150 STG Lead Temperature for Soldering Purposes(1/8 from case for 10s) T L 260 Rev. - 1.0 www.jscj-elec.com 1 MOSFET ELECTRICAL CHARACTERISTICS T =25 unless otherwise specified a Parameter Symbol Test Condition Min Typ Max Unit Off characteristics Drain-source breakdown voltage V(BR) DSS VGS = 0V, ID =250uA 30 V 1 Zero gate voltage drain current I VDS =24V, VGS =0V A DSS Gate-body leakage current I VDS =0V, VGS =20V 100 nA GSS On characteristics Gate-threshold voltage VGS(th) VDS =V , ID =250uA 1.0 1.4 2.5 V GS VGS =10V, ID =20A m 4.2 2.9 Static drain-source on-sate resistance RDS(on) VGS =4.5V, ID =20A m 7.3 4.2 Forward transconductance g VDS =10V, ID =20A S FS 24 Dynamic characteristics Input capacitance C 1230 2460 3198 iss VDS =15V,VGS =0V, Output capacitance C 409 531 pF oss 204 f =100KHz Reverse transfer capacitance C 186 373 485 rss Switching characteristics Total gate charge Q 61.2 g V =10V, GS nC Gate-source charge Q 4.7 gs V =25V, I =14A DS D Gate-drain charge Q gd 19.7 Turn-on delay time td (on) 19 Turn-on rise time tr 44 V =15V,RL=0.75, DS ns Turn-off delay time td(off) V =10V,R =3 58 GS G Turn-off fall time tf 16.7 Drain-Source Diode Characteristics Drain-source diode forward voltage V 1.2 V SD VGS =0V, I =20A S Continuous drain-source diode forward current I 60 A S Pulsed drain-source diode forward current I 240 A SM Notes: 1.T =25 Limited only by maximum temperature allowed. C 2.P 10s, Duty cycle1%. W 3.EAS condition: V =15V,V =10V, L=0.1mH, Rg=25 Starting T = 25. DD GS J 4.Pulse Test : Pulse Width300s, duty cycle 2%. 5.Guaranteed by design, not subject to production. 6.The value of R is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air JA environment with T =25 . a Rev. - 1.0 www.jscj-elec.com 2