JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN:%56-8L Plastic-Encapsulate MOSFETS CJAC 100P03 P-Channel Power MOSFET I V R TYP D (BR)DSS DS(on) PDFN5:% 6-8L -10V 2. 3m -30V -100A - 3.4m 4.5V DESCRIPTION The CJAC100P03 uses advanced trench technology and design to provide excellent R with low gate charge. It can be used DS(ON) in a wide variety of applications FEATURES Battery switch Good stability and uniformity with high E AS Load switch Excellent package for good heat dissipation High density cell design for ultra low R Special process technology for high ESD DS(ON) Fully characterized avalanche voltage and capability current APPLICATIONS SMPS and general purpose applications Uninterruptible Power Supply Hard switched and high frequency circuits EQUIVALENT CIRCUIT MARKING D D D D 8 7 6 5 CJAC100P03 = Part No. CJAC Solid dot = Pin1 indicator 1 00 P03 XX XX = Code 1 2 3 4 S S S G MAXIMUM RATINGS ( T =25 unless otherwise noted ) a Parameter Symbol Limit Unit Drain-Source Voltage V -30 V DS Gate-Source Voltage V 20 V GS Continuous Drain Current I -100 A D Pulsed Drain Current I -400 A DM Single Pulsed Avalanche Energy E 100 mJ AS Thermal Resistance from Junction to Ambient /W 62.5 R JA Thermal Resistance from Junction to Case R /W JC 0.92 Junction Temperature T 150 J Storage Temperature Range T -55 ~+150 stg Lead Temperature for Soldering Purposes(1/8 from case for 10s) TL 260 1 www.jscj-elec.com Rev. - 1.0MOSFET ELECTRICAL CHARACTERISTICS T =25 unless otherwise specified a Parameter Symbol Test Condition Min Typ Max Unit Off characteristics Drain-source breakdown voltage V(BR) DSS VGS=0V, ID=-250A -30 V -1 Zero gate voltage drain current I VDS=-24V, VGS =0V A DSS Gate-body leakage current I VDS=0V, VGS =20V 100 nA GSS On characteristics Gate-threshold voltage VGS(th) VDS=V , ID =-250A -1.2 -1.6 -2.2 V GS VGS=-10V, ID =-30A 3.3 m 2.3 Static drain-source on-sate resistance RDS(on) VGS=-4.5V, ID =-20A 3.4 5.0 m Forward transconductance g VDS=-10V, ID=-3A S FS 20 Dynamic characteristics Input capacitance C 7930 12000 iss VDS =-25V,VGS =0V, Output capacitance C 985 pF oss 1300 f =1MHz Reverse transfer capacitance C 505 rss 750 Gate resistance Rg 3.2 f =1MHz Switching characteristics Total gate charge Q 146 g 210 V =-10V, V =-24V, GS DS nC Gate-source charge Q 22 gs 44 I =-10A D Gate-drain charge Q 32 gd 64 Turn-on delay time td 17 (on) 34 Turn-on rise time tr 61 120 V =-15V,R =5, DS L ns V =-10V,R =5 GS G Turn-off delay time td(off) 200 400 Turn-off fall time tf 113 220 Drain-Source Diode Characteristics Drain-source diode forward voltage V VGS =0V, I =-10A -1.0 V SD S Continuous drain-source diode forward I -100 A S current Pulsed drain-source diode forward current I -400 A SM Notes: 1.T =25 Limited only by maximum temperature allowed. C 2.P 10s, Duty cycle1%. W 3.EAS condition: V =-20V,V =-10V, L=0.1mH, Rg=25 Starting T = 25. DD GS J 4.Pulse Test : Pulse Width300s, duty cycle 2%. 5.Guaranteed by design, not subject to production. Rev. - 1.0 www.jscj-elec.com 2