JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB56-8L-D Plastic-Encapsulate MOSFETS CJAC 70N03 N-Channel Power MOSFET V I (BR)DSS R TYP D DS(on) PDFN56-8L:% -D 10V 4.3m 30V 70A 6.0m 4.5V DESCRIPTION The CJAC70N03 uses advanced trench technology and design to provide excellent R with low gate charge. It can be used in a DS(ON) wide variety of applications FEATURES Battery switch Good stability and uniformity with high E AS Load switch Excellent package for good heat dissipation High density cell design for ultra low R Special process technology for high ESD DS(ON) Fully characterized avalanche voltage and capability current APPLICATIONS SMPS and general purpose applications Uninterruptible Power Supply Hard switched and high frequency circuits MARKING EQUIVALENT CIRCUIT D D D D 8 7 6 5 CJAC70N03 = Part No. CJAC Solid dot=Pin1 indicator 70N03 XX XX=Code 1 2 3 4 S S S G MAXIMUM RATINGS ( T =25 unless otherwise noted ) a Parameter Symbol Limit Unit Drain-Source Voltage V 30 V DS Gate-Source Voltage V 20 V GS Continuous Drain Current I 70 A D Pulsed Drain Current I 280 A DM Single Pulsed Avalanche Energy E 420 mJ AS Power Dissipation P 2.0 W D Thermal Resistance from Junction to Ambient R 62.5 /W JA Junction Temperature T 150 J Storage Temperature Range T -55 ~+150 stg Lead Temperature for Soldering Purposes(1/8 from case for 10s) TL 260 Rev. - 1.1 www.jscj-elec.com 1 MOSFET ELECTRICAL CHARACTERISTICS T =25 unless otherwise specified a Parameter Symbol Test Condition Min Typ Max Unit Off characteristics Drain-source breakdown voltage V(BR) DSS VGS = 0V, ID =250A 30 V 1 Zero gate voltage drain current I VDS =24V, VGS =0V A DSS Gate-body leakage current I VDS =0V, VGS =20V 100 nA GSS On characteristics Gate-threshold voltage VGS(th) VDS =V , ID =250A 1.0 1.4 2.5 V GS VGS =10V, ID =20A m 4.3 5.5 Static drain-source on-sate resistance RDS(on) VGS =4.5V, ID =20A 6.0 9.5 m Forward transconductance g VDS =10V, ID =20A 24 S FS Dynamic characteristics Input capacitance C 1980 3960 iss VDS =15V,VGS =0V, Output capacitance C 320 640 pF oss f =1MHz Reverse transfer capacitance C 240 480 rss Switching characteristics Total gate charge Q 45 90 g V =10V, V =25V, GS DS nC Gate-source charge Q 3 6 gs I =14A D Gate-drain charge Q 30 gd 15 Turn-on delay time td 12 24 (on) Turn-on rise time tr 36 72 V =15V,R =0.75, DS L ns V =10V,R =3 GS G Turn-off delay time td(off) 49 98 Turn-off fall time tf 12 24 Drain-Source Diode Characteristics Drain-source diode forward voltage V VGS =0V, I =20A 1.2 V SD S Continuous drain-source diode forward I 70 A S current Pulsed drain-source diode forward current I 280 A SM Notes: 1.T =25 Limited only by maximum temperature allowed. C 2.P 10s, Duty cycle1%. W 3.EAS condition: V =15V,V =10V, L=0.1mH, Rg=25 Starting T = 25. DD GS J 4.Pulse Test : Pulse Width300s, duty cycle 2%. 5.Guaranteed by design, not subject to production. 6.The value of R is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T =25 . JA a Rev. - 1.1 www.jscj-elec.com 2