JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN:%56-8L-D Plastic-EncapsulateMOSFETS CJAC 75SN10 N-Channel Power MOSFET V R TYP I (BR)DSS DS(on) D PDFN :%56-8L 8.0m 10V 100V 75A 10.5m 4.5V DESCRIPTION The CJAC75SN10 uses SGT technology and design to provide excellent R with low gate charge. It can be used in DS(ON) a wide variety of applications . FEATURES High Power and current handing capability Good stability and uniformity with high E AS Load switch Excellent package for good heat dissipation High density cell design for ultra low R DS(ON) Lead free product is acquired APPLICATIONS SMPS and general purpose applications Uninterruptible Power Supply Hard switched and high frequency circuits Power management MARKING EQUIVALENT CIRCUIT D D D D 8 7 6 5 CJAC75SN10 = Part CJAC No. Solid dot=Pin1 75SN10 XX indicator XX=Code 1 2 3 4 S S S G ABSOLUTE MAXIMUM RATINGS (T =25 unless otherwise noted) a Parameter Symbol Value Unit Drain-Source Voltage V 100 DS V Gate-Source Voltage V 20 GS Continuous Drain Current I 75 D A I 2 60 Pulsed Drain Current DM P 138.9 W Maximum Power Dissipation D Avalanche energy* E 100 mJ AS 0.9 Thermal Resistance from Junction to Case R /W JC Thermal Resistance from Junction to Ambient R 62 JA /W Junction Temperature T 150 J Storage Temperature T -55~ +150 STG Rev. - 1.1 www.jscj-elec.com 1 MOSFET ELECTRICAL CHARACTERISTICS T =25 unless otherwise specified a Parameter Symbol Test Condition Min Type Max Unit Static Characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250A 100 V Zero gate voltage drain current I V =100V,V = 0V 1 A DSS DS GS Gate-body leakage current I V =20V, V = 0V 100 nA GSS GS DS Gate threshold voltage V V =V , I =250A 1.0 2.5 V GS(th) DS GS D 1.7 V =10V, I =10A 8.0 10 GS D Drain-source on-resistance R m DS(on) V =4.5V, I =10A 10.5 GS D 16 Dynamic characteristics Total gate charge Q 40 80 g Gate-source charge Q V =50V,V =10V,I =20A 8 16 nC gs DS GS D Gate-drain charge Q 6 12 gd Input Capacitance C 1830 3660 iss Output Capacitance C V =50V,V =0V,f =100kHz 357 720 pF oss DS GS Reverse Transfer Capacitance C 7.15 15 rss Gate resistance R g f =1MHz 1.3 SWITCHING PARAMETERS Turn-on delay time t 8.0 16 d(on) Turn-on rise time t 5.2 11 r V =10V, V =50V, R =10, GS DS G ns I =20A Turn-off delay time t D 4 4.8 90 d(off) Turn-off fall time t 5.6 13 f Source-Drain Diode characteristics Body diode voltage V I =20A,V =0V 1.2 V SD S GS ns Reverse Recovery Time 42 t rr V =50V, I =20A, R F dI /dt=500A/s F n C Reverse Recovery Charge 165 Q rr Notes: 1.T =25 Limited only by maximum temperature allowed. C 2.P 10s, Duty cycle1%. W 3.EAS condition: V =50V,V =10V, L=0.1mH, Rg=25 Starting T = 25. DD GS J 4.Pulse Test : Pulse Width300s, duty cycle 2%. 5.Guaranteed by design, not subject to production. 6.The value of R ,RJC is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air T =25 . JA environment with a Rev. - 1.1 www.jscj-elec.com 2