JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB56-8L Plastic-Encapsulate MOSFETS CJAC90SN12 N-Channel Power MOSFET V R MAX I (BR)DSS DS(on) D PDFNWB56-8L 120V 6.8m 10V 90A DESCRIPTION The CJAC90SN12 uses shielded gate trench technology and design to provide excellent R with low gate charge. It can be DS(ON) used in a wide variety of applications FEATURES High Power and current handing capability Good stability and uniformity with high E AS Load switch Excellent package for good heat dissipation High density cell design for ultra low R DS(ON) Lead free product is acquired APPLICATIONS SMPS and general purpose applications Uninterruptible Power Supply Hard switched and high frequency circuits Power management MARKING EQUIVALENT CIRCUIT D D D D 8 7 6 5 CJAC90SN12 = Part No. Solid dot=Pin1 indicator CJAC 90SN12 XX=Code XX 1 2 3 4 S S S G ABSOLUTE MAXIMUM RATINGS (T =25 unless otherwise noted) a Parameter Symbol Value Unit Drain-Source Voltage V 120 DS V Gate-Source Voltage V 20 GS Continuous Drain Current I 90 D A (1) I 360 Pulsed Drain Current DM (2) Maximum Power Dissipation P W D 2 500 Avalanche energy* E mJ AS 0.85 Thermal Resistance from Junction to Case R /W Tc=25 JC (3) Thermal Resistance from Junction to Ambient R 62.5 JA /W Junction Temperature T 150 J Storage Temperature T -55~ +150 STG * EAS test condition V =50V, VGS=10V, RG=25 , L=0.5 mH, starting Tj=25 . DD www.jscj-elec.com Rev. - 1.0 1 MOSFET ELECTRICAL CHARACTERISTICS T =25 unless otherwise specified a Parameter Symbol Test Condition Min Type Max Unit Static Characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250A 120 V Zero gate voltage drain current I V =120V,V = 0V 1 A DSS DS GS Gate-body leakage current I V =20V, V = 0V 100 nA GSS GS DS (1) 3.0 Gate threshold voltage V V =V , I =250A 2.0 4.0 V GS(th) DS GS D (1) R V =10V, I =20A 5.4 6.8 m Drain-source on-resistance DS(on) GS D Gate resistance 3.2 R G (4) Dynamic characteristics Total gate charge Q 45.2 g Gate-source charge Q V =60V,V =10V,I =20A 13.5 nC gs DS GS D Gate-drain charge Q 6.7 gd Input Capacitance C 3670 iss Output Capacitance C V =60V,V =0V,f =1MHz 472 pF oss DS GS Reverse Transfer Capacitance C 7.6 rss (4) SWITCHING PARAMETERS Turn-on delay time t 16 d(on) Turn-on rise time t 9 r V =10V, V =60V, GS DS ns R =10, I =20A Turn-off delay time t G D 27 d(off) Turn-off fall time t 12 f (1) Source-Drain Diode characteristics Body diode voltage V I =10A,V =0V 1.2 V SD S GS ns Reverse recovery time T 50 rr V =60V, I =20A, di /dt=500 A/s R F F 300 Q nC Reverse recovery charge rr Notes: 1. Pulse Test : Pulse width300s, duty cycle0.5%. 2. Mounted on a glass epoxy board of 25.4mm x 25.4mm x 0.8mm. 3. The value of R is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air J A environment with T =25 . a 4. Guaranteed by design, not subject to production testing. www.jscj-elec.com Rev. - 1.0 2