JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD DFNWB3 3-8 L-J Plastic-Encapsulate MOSFETS DFNWB33- L8 -J CJAE2002 Dual N-Channel MOSFET I V R TYP D (BR)DSS DS(on) m 4.5V 4.4 4.5m 4.0V 18V 15A 4.6 m 3.8V m 3.1V 4.9 5.4m 2.5V DESCRIPTION The CJAE2002 uses advanced ench tr technology to provide excellent R and low gate charge. It is ESD protected. This device is DS(ON) suitable for use as a uni-directional or bi-directional load switch,facilitated by its common-drain configuration. Equivalent Circuit MARKING: S2 S2 S2 G2 D1/D2 Back Top S1 S1 S1 G1 MAXIMUM RATINGS (T =25 unless otherwise noted) a Parameter Symbol Value Unit Drain-Source Voltage V 18 V DS Gate-Source Voltage V 12 GS V T 15 = 25 C A T = 70 C 13 A (1) A Continuous Drain Current ID T = 25 C C 55 35 T = 100 C C (1),(2) Pulsed Drain Current I 100 DM A Thermal Resistance from Junction to Ambient R JA 42 /W (3) Total Power Dissipation 3 P W D Junction Temperature T 150 j Storage Temperature T -55~+150 stg Lead Temperature for Soldering Purposes(1/8 from case for 10 s) T 260 L 1 www.jscj-elec.com Rev. - 1.0MOSFET ELECTRICAL CHARACTERISTICS unless otherwise specified T =25 a Parameter Symbol Test Condition Min Typ Max Unit STATIC PARAMETERS Drain-source breakdown voltage V (BR) DSS VGS = 0V, ID =250A 18 V Zero gate voltage drain current IDSS VDS =16V,VGS = 0V 1 A VGS =4.5V, VDS = 0V 1 A Gate-body leakage current IGSS VGS =8V, VDS = 0V 10 A (4) Gate threshold voltage VGS(th) VDS =V , ID =250A 0.4 1 V GS 4.0 4.4 5.5 VGS =4.5V, ID =3A m VGS =4.0V, ID =3A 4.1 4.5 5.8 m (4) Drain-source on-resistance RDS(on) VGS =3.8V, ID =3A 4.2 4.6 6.0 m VGS =3.1V, ID =3A 4.4 4.9 6.3 m VGS =2.5V, ID =3A 4.8 6.5 5.4 m (4) Forward tranconductance gFS VDS =5V, ID =3A 8 42 S (4) Diode forward voltage V I =1A, VGS = 0V 1 V SD S (5) DYNAMIC PARAMETERS Input Capacitance C pF iss 1970 Output Capacitance C VDS =10V,VGS =0V,f =1MHz 315 pF oss Reverse Transfer Capacitance C 285 pF rss Total gate charge Q nC g 26.5 Gate-source charge Q VDS =10V,VGS =4.5V,ID =3A 2.4 nC gs Gate-drain charge Q 7.6 nC gd (5) SWITCHING PARAMETERS Turn-on delay time td(on) 4.5 ns Turn-on rise time tr 8.9 ns V =5V,V =10V, ID GS DD =3A R =1.35,R =3 Turn-off delay time td(off) L GEN 85 ns Turn-off fall time t 24 ns f Drain-Source Diode Charact eristics (6) I Diode Forward Current S - - 15A Notes : 2 1. The data tested by surface mounted on a 1 inch FR-4 board with 2OZ c opper. 2. Pulse Test:Pulse Width < 10us, Duty Cycle < 0.5%. 3. The power dissipation is limited by 150 junction temperature 4. Pulse Test : Pulse width300s, duty cycle0.5%. 5. Guaranteed by design, not subject to production testing. 6. The data is theoretically the same as I , in real applications , should be limited by total power dissipa tion. D 2 www.jscj-elec.com Rev. - 1.0