X-On Electronics has gained recognition as a prominent supplier of CJBA7002K MOSFETs across the USA, India, Europe, Australia, and various other global locations. CJBA7002K MOSFETs are a product manufactured by Changjing Electronics Technology. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

CJBA7002K Changjing Electronics Technology

CJBA7002K electronic component of Changjing Electronics Technology
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Part No.CJBA7002K
Manufacturer: Changjing Electronics Technology
Category: MOSFETs
Description: MOSFET N Channel 60V 410mA 2.3V @ 250uA 1.5O @ 40mA,10V DFN1006-3L RoHS
Datasheet: CJBA7002K Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10: USD 0.0484 ea
Line Total: USD 0.48 
Availability - 16903
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ: 10  Multiples: 10
Pack Size: 10
Availability Price Quantity
16903
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 10
Multiples : 10
10 : USD 0.0484
100 : USD 0.0391
300 : USD 0.0347
1000 : USD 0.0312
5000 : USD 0.0285
10000 : USD 0.027

   
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta 25°C
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the CJBA7002K from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CJBA7002K and other electronic components in the MOSFETs category and beyond.

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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD DFN1006-3L Plastic-Encapsulate MOSFETs CJBA7002K N-Channel MOSFET V R I (BR)DSS DS(on)MAX D DFN1006-3L 1.5 10V 60V 0.41A 1.8 4.5V FEATURE APPLICATION Low On-Resistance Load Switch Low Threshold Voltage Portable Applications Fast Switching Speed Power Management Functions ESD Protected Gate MARKING: Equivalent Circuit ABSOLUTE MAXIMUM RATINGS (T =25 unless otherwise noted) a Parameter Symbol Value Unit Drain-Source Voltage V 60 V DS Gate-Source Voltage V 20 V GS T =25 0.41 a Continuous Drain Current I A D T =85 0.30 a Pulsed Drain Current I 1.2 A DM Power Dissipation PD 0.1 W Thermal Resistance from Junction to Ambient R 1250 /W JA Storage Temperature TSTG -55~ +150 Rev. - 1.0 www.jscj-elec.com 1 MOSFET ELECTRICAL CHARACTERISTICS MOSFET ELECTRICAL CHARACTERISTICS(T =25 unless otherwise noted) a Parameter Symbol Test Condition Min Type Max Unit Static Characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250A 60 V Zero gate voltage drain current I V =60V,V = 0V 100 nA DSS DS GS V =20V, V = 0V 10 GS DS Gate-body leakage current I A GSS V =5V, V = 0V 1 GS DS Gate threshold voltage V V =V , I =250A 1.3 1.4 2.3 V GS(th) DS GS D V =10V, I =40mA 1.2 1.5 GS D a Drain-source on-resistance RDS(on) V =4.5V, I =35mA 1.3 1.8 GS D a Forward tranconductance gfs V = 5V, I = 40mA 100 mS DS D Diode forward voltage V V =0V, I =300mA 0.84 1.1 V SD DS S Dynamic characteristics b Input Capacitance C 41 80 iss b Output Capacitance C V =40V,V =0V,f =1MHz 3.6 7 pF oss DS GS b Reverse Transfer Capacitance C 2.9 5.6 rss Gate resistance R V = 0V, V = 0V, f = 1MHz 81 200 g DS GS VGS =4.5V 0.72 1.5 Total Gate Charge Q g 1.41 2.8 V = 50V, I = 1A nC DS D Gate-Source Charge Q V =10V 0.24 0.4 gs GS Gate-Drain Charge Q 0.24 0.5 gd b Turn-on delay time t 3.98 10 d(on) b Turn-on rise time t 4.95 10 r V =50V,I =1A, DS D ns b V =10V,RG=6 Turn-off delay time t GS 18.52 40 d(off) b Turn-off fall time t 11.94 25 f Notes: a. Pulse Test : Pulse width300s, duty cycle 2%. b. These parameters have no way to verify. Rev. - 1.0 www.jscj-elec.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
CJ
Jiangsu Changjing Electronics Technology
Jiangsu Changjing Electronics Technology Co., Ltd.
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