JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD DFN1006- 3L-A Plastic-Encapsulate MOSFETs CJBB3134K N-Channel MOSFET I V R MAX D (BR)DSS DS(on) DFN1006-3L-A m 4.5V 500 20V m 2.5V 0.75A 700 3 900m 1.8V 2 1 FEATURE APPLICATION z Lead Free Product is Acquired z Load/ Power Switching z Surface Mount Package z Interfacing Switching z N-Channel Switch with Low R (on) DS z Battery Management for Ultra Small z Operated at Low Logic Level Gate Drive Portable Electronics z ESD Protected Gate z Logic Level Shift MARKING: Equivalent Circuit 1 2 3 ABSOLUTE MAXIMUM RATINGS (T =25 unless otherwise noted) a Symbol Parameter Value Unit Drain-Source Voltage V 20 V DS Typical Gate-Source Voltage V 12 V GS Continuous Drain Current (note 1) I 0.75 A D Pulsed Drain Current (tp=10us) I 1.8 A DM Power Dissipation (note 1) P 100 mW D Thermal Resistance from Junction to Ambient (note 1) R 1250 /W JA Junction Temperature T 150 J Storage Temperature T -55~ 150 STG Lead Temperature for Soldering Purposes(1/8 from case for 10 s) T 260 L Rev. - 1.0 www.jscj-elec.com 1 MOSFET ELECTRICAL CHARACTERISTICS T =25 unless otherwise noted a Parameter Symbol Test Condition Min Type Max Unit Static Characteristics Drain-source breakdown voltage V V = 0V, I =250A 20 V (BR)DSS GS D Zero gate voltage drain current I V =20V,V = 0V 1 A DSS DS GS Gate-body leakage current I V =10V, V = 0V 20 A GSS GS DS (2) Gate threshold voltage V V =V , I =250A 0.35 0.75 1.1 V GS(th) DS GS D V =4.5V, I =150mA 250 500 GS D V =2.5V, I =150mA 300 700 GS D (2) Drain-source on-resistance R V =1.8V, I =150mA 370 900 m DS(on) GS D V =1.5V, I =20mA 460 GS D V =1.2V, I =10mA 1200 GS D Forward tranconductance g V =10V, I =150mA 150 mS FS DS D (4) Dynamic characteristics Input Capacitance C 79 120 iss Output Capacitance C V =16V,V =0V,f=1MHz 13 20 pF oss DS GS Reverse Transfer Capacitance C 9 15 rss (4) Switching Characteristics (3) Turn-on delay time t 6.7 d(on) (3) Turn-on rise time t 4.8 r V =10V,I =500mA, DS D ns (3) V =4.5V,R =10 Turn-off delay time t GS G 17.3 d(off) (3) Turn-off fall time t 7.4 f Source-Drain Diode characteristics (3) Diode Forward voltage V I =0.15A, V = 0V 1.2 V DS S GS Notes: 1. Surface mounted on FR4 board using the minimum recommended pad size. 2. Pulse Test : Pulse Width=300s, Duty Cycle=2%. 3. Switching characteristics are independent of operating junction temperatures. 4. Guaranteed by design, not subject to producting. Rev. - 1.0 www.jscj-elec.com 2