8 7 6 5 1 2 3 4 JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD DFNWB33-8L-BE Plastic-Encapsulate MOSFETS N-Channel Power MOSFET CJBM3020 I V R TYP D (BR)DSS DS(on) DFNWB33-8L-BE 10 V 8.5 m 3 0 V 20A 11.5m 4.5V DESCRIPTION The CJBM3020 uses advanced trench technology and design to provide excellent R with low gate charge. It can be used in a DS(ON) wide variety of applications FEATURES Battery switch Good stability and uniformity with high E AS Load switch Excellent package for good heat dissipation High density cell design for ultra low R Special process technology for high ESD DS(ON) Fully characterized avalanche voltage and capability current APPLICATIONS SMPS and general purpose applications Uninterruptible Power Supply Hard switched and high frequency circuits MARKING EQUIVALENT CIRCUIT G2 S2 S2 S2 BM3020=Part No. BM3020 Solid dot=Pin1 indicator xx XX=Date Code G1 D1 D1 D1 MAXIMUM RATINGS ( T =25 unless otherwise noted ) a Parameter Symbol Limit Unit Drain-Source Voltage V 30 V DS Gate-Source Voltage V 20 V GS Continuous Drain Current I 20 A D Pulsed Drain Current I 100 A DM (1) Single Pulsed Avalanche Energy E 70 mJ AS Power Dissipation P 1.5 W D Thermal Resistance from Junction to Ambient R 83.3 /W JA Junction Temperature T 150 J Storage Temperature Range T -55 ~+150 stg Lead Temperature for Soldering Purposes(1/8 from case for 10s) TL 260 (1).E condition: V =15V,L=0.14mH, R =25, Starting T = 25C AS DD G J (2).Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt 1 www.jscj-elec.com Rev. - 1.0 MOSFET ELECTRICAL CHARACTERISTICS T =25 unless otherwise specified a Parameter Symbol Test Condition Min Typ Max Unit Off characteristics Drain-source breakdown voltage V(BR) DSS VGS = 0V, ID =250A 30 V 1 Zero gate voltage drain current I VDS =30V, VGS =0V A DSS 100 Gate-body leakage current I VDS =0V, VGS =20V nA GSS On characteristics (note1) Gate-threshold voltage VGS(th) VDS =V , ID =250A 1.0 1.5 3.0 V GS VGS =10V, ID =10A 8.5 14 m Static drain-source on-sate resistance RDS(on) VGS =4.5V, ID =10A 11.5 18 m 15 Forward transconductance g VDS =5V, ID =20A S FS Dynamic characteristics (note 2) Input capacitance C 823 iss VDS =15V,VGS =0V, Output capacitance C 138 pF oss f =1MHz Reverse transfer capacitance C 100 rss Switching characteristics (note 2) Total gate charge Q 13 g V =15V, DS nC Gate-source charge Q 3 gs V =10V, I =10A GS D Gate-drain charge Q 4.5 gd Turn-on delay time td 10 (on) Turn-on rise time tr 8 V =15V,V =10V, DD GS ns RL=1.8,R =1.8 GEN Turn-off delay time td(off) 30 Turn-off fall time tf 5 Drain-Source Diode Characteristics Drain-source diode forward voltage(note1) V VGS =0V, I =10A 1.2 V SD S Continuous drain-source diode forward I 20 A S current Pulsed drain-source diode forward current I 100 A SM Reverse Recovery Time t TJ = 25C, IF = 10A 22 35ns rr Reverse Recovery Charge di/dt = 100A/s(Note1) Qrr 12 20 nC Notes: 1. Pulse Test : Pulse Width300s, duty cycle 2%. 2. Guaranteed by design, not subject to production. Rev. - 1.0 www.jscj-elec.com 2