JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD DFNWB2 3-6L-C Plastic-Encapsulate MOSFETS DFNWB23-6L-C CJCD2007 Dual N-Channel MOSFET I V R TYP D (BR)DSS DS(on) 12.5m 4.5V 13 m 4.0V 2 0V 8A 3.8V 13.5m 14.5m 3 .1V m 17 2 .5V DESCRIPTION The CJCD2007 uses advancede nch tr technology to provide excellent R and low gate charge. It is ESD protected. This device is DS(ON) suitable for use as a uni-directional or bi-directional load switch,facilitated by its common-drain configuration. MARKING: Equivalent Circuit G2 S2 S2 D1/D2 G1 S1 S1 Back Top MAXIMUM RATINGS (T =25 unless otherwise noted) a Parameter Symbol Value Unit Drain-Source Voltage V 20 V DS Gate-Source Voltage V 12 V GS Continuous Drain Current I 8 A D Pulsed Drain Current I * 45 A DM Thermal Resistance from Junction to Ambient R 83.3 /W JA Junction Temperature T 150 j Storage Temperature T -55~+150 stg Lead Temperature for Soldering Purposes(1/8 from case for 10 s) T 260 L 1 Rev. - 1.0 www.jscj-elec.com MOSFET ELECTRICAL CHARACTERISTICS unless otherwise specified T =25 a Parameter Symbol Test Condition Min Typ Max Unit STATIC PARAMETERS Drain-source breakdown voltage V (BR) DSS VGS = 0V, ID =250A 20 V Zero gate voltage drain current IDSS VDS =16V,VGS = 0V 1 A VGS =4.5V, VDS = 0V 1 A Gate-body leakage current IGSS VGS =8V, VDS = 0V 10 A Gate threshold voltage (note 1) VGS(th) VDS =V , ID =250A 0.4 1 V GS VGS =4.5V, ID =3A 10 12.5 15 m VGS =4.0V, ID =3A 10.5 13 16 m Drain-source on-resistance (note 1) RDS(on) VGS =3.8V, ID =3A 10.8 13.5 16.5 m m VGS =3.1V, ID =3A 12 14.5 18 VGS =2.5V, ID =3A 13 17 23 m Forward tranconductance (note 1) gFS VDS =5V, ID =7A 9 S Diode forward voltage(note 1) V I =1A, VGS = 0V 1 V SD S DYNAMIC PARAMETERS (note 2) Input Capacitance C 1150 pF iss Output Capacitance C VDS =10V,VGS =0V,f =1MHz 185 pF oss Reverse Transfer Capacitance C 145 pF rss Total gate charge Q 15 nC g Gate-source charge Q VDS =10V,VGS =4.5V,ID =7A 0.8 nC gs Gate-drain charge Q 3.2 nC gd SWITCHING PARAMETERS(note 2) Turn-on delay time td(on) 6 ns Turn-on rise time tr 13 ns V =5V,V =10V, GS DD R =1.35,R =3 Turn-off delay time td(off) L GEN 52 ns Turn-off fall time tf 16 ns Drain-Source Diode Charact eristics I Diode Forward Current S - - 6.0A Notes : 1. Pulse Test : Pulse width300s, duty cycle0.5%. 2. Guaranteed by design, not subject to production testing. 2 Rev. - 1.0 www.jscj-elec.com