JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD DFNWB3X3-8L-U Plastic-Encapsulate MOSFETS CJ DE 8404 N-Channel + P-Channel MOSFET DFNWB3 3-8L-U Product Summary V R I (BR)DSS DS(on)MAX D 50m -10V -30V -4A 80m -4.5V 50m 10V 30V 5A 80m 4.5V Feature Low drain-source ON-resistance High forward transfer admittance Low leakage current Enhancement mode Application Portable equipment Motor drive MARKING: Equivalent Circuit DE8404 = Device Code XX = Date Code ABSOLUTE MAXIMUM RATINGS (T =25 unless otherwise noted) a Parameter Symbol Value Unit P-MOSFET Drain-Source Voltage V -30 V DS Gate-Source Voltage V 20 V GS (1) Continuous Drain Current I -4 A D Pulsed Drain Current I -16 A DM Power Dissipation P 3 W D N-MOSFET Drain-Source Voltage V 30 V DS Gate-Source Voltage V 20 V GS Continuous Drain Current I 5 A D (1) Pulsed Drain Current I 20 A DM Power Dissipation P 3 W D Temperature and Thermal Resistance (2) Thermal Resistance from Junction to Ambient RJA 42 /W Junction Temperature T 150 J Storage Temperature T -55~ +150 STG 1 Rev. - 1.0 www.jscj-elec.com MOSFET ELECTRICAL CHARACTERISTICS P-channel MOSFET ELECTRICAL CHARACTERISTICS(T =25 unless otherwise noted) a Parameter Symbol Test Condition Min Type Max Unit Static Characteristics Drain-source breakdown voltage V V = 0V, I =-250A -30 V (BR)DSS GS D Zero gate voltage drain current I V =-30V,V = 0V -1 A DSS DS GS Gate-body leakage current I V =20V, V = 0V 100 nA GSS GS DS Gate threshold voltage V V =V , I =-250A -1 -1.7 -3.0 V GS(th) DS GS D V =-10V, I =-2.0A 35 50 (3) GS D Drain-source on-resistance R m DS(on) V =-4.5V, I =-2.0A 53 80 GS D Forward tranconductance g V =-5V, I =-1.0A 5 S FS DS D (3) Diode forward voltage V I =-1.0A, V = 0V -0.8 -1.2 V DS S GS (4) Dynamic characteristics Input Capacitance C 850 iss V =-15V,V S=0V, F=1.0MHz pF Output Capacitance C DS G 101 oss Reverse Transfer Capacitance C 65 rss Total gate charge Q 9.5 g V =-15V,I =-4A,V =-4.5V nC Gate-source charge Q DS D GS 2 gs Gate-drain charge Q 3 gd (4) Switching Characteristics Turn-on delay time t 7 d(on) V =-15V,I =-4A Turn-on rise time t DD D 3 r nS V =-10V,R =6 Turn-off delay time t GS GEN 20 d(off) Turn-off fall time t 12 f N-channel MOSFET ELECTRICAL CHARACTERISTICS(T =25 unless otherwise noted) a Parameter Symbol Test Condition Min Type Max Unit Static Characteristics Drain-source breakdown voltage V V = 0V, I =250A 30 V (BR)DSS GS D Zero gate voltage drain current I V =30V,V = 0V 1 A DSS DS GS Gate-body leakage current I V =20V, V = 0V 100 nA GSS GS DS Gate threshold voltage V V =V , I =250A 1.0 1.3 3.0 V GS(th) DS GS D V =10V, I =2.0A 25 50 (3) GS D Drain-source on-resistance R m DS(on) V =4.5V, I =2.0A 35 80 GS D Forward tranconductance g V =5V, I =1.0A 5 S FS DS D (3) Diode Forward voltage V I =1.0A, V = 0V 0.8 1.2 V DS S GS (4) Dynamic characteristics Input Capacitance C 633 iss V =15V,V =0V, F=1.0MHz pF Output Capacitance C DS GS 65 oss Reverse Transfer Capacitance C 55 rss Total gate charge Q 9.5 g V =15V,I =5.8A,V =4.5V nC Gate-source charge Q DS D GS 1.5 gs Gate-drain charge Q 3 gd (4) Switching Characteristics Turn-on delay time t 3.3 d(on) V =15V, R =2.7 Turn-on rise time t DD L 4.8 r ns V =10V,R =3 Turn-off delay time t GS GEN 26 d(off) Turn-off fall time t 4 f Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t < 5 sec. 3. Pulse Test : Pulse Width300s, Duty Cycle 2%. 4. Guaranteed by design, not subject to production testing. Rev. - 1.0 2 www.jscj-elec.com