X-On Electronics has gained recognition as a prominent supplier of CJE3134K MOSFETs across the USA, India, Europe, Australia, and various other global locations. CJE3134K MOSFETs are a product manufactured by Changjing Electronics Technology. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

CJE3134K Changjing Electronics Technology

CJE3134K electronic component of Changjing Electronics Technology
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Part No.CJE3134K
Manufacturer: Changjing Electronics Technology
Category: MOSFETs
Description: SOT-523-3 MOSFETs ROHS
Datasheet: CJE3134K Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
20: USD 0.0418 ea
Line Total: USD 0.84 
Availability - 2335
Ship by Wed. 11 Dec to Mon. 16 Dec
MOQ: 20  Multiples: 20
Pack Size: 20
Availability Price Quantity
2335
Ship by Wed. 11 Dec to Mon. 16 Dec
MOQ : 20
Multiples : 20
20 : USD 0.0418
200 : USD 0.0343
600 : USD 0.0301
3000 : USD 0.0263
9000 : USD 0.0242
21000 : USD 0.0229

   
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Reverse Transfer Capacitance Crss@Vds
Type
Input Capacitance Ciss@Vds
Total Gate Charge Qg@Vgs
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the CJE3134K from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CJE3134K and other electronic components in the MOSFETs category and beyond.

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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT- 523 Plastic-Encapsulate MOSFETS CJE3134K N-Channel MOSFET I V R MAX D (BR)DSS DS(on) SOT-523 380 m 4.5V 20V 0.75A 450 m 2.5V 800m 1.8V 1. GATE 2. SOURCE 3. DRAIN APPLICATION FEATURE z Drivers:Relays, Solenoids, z High-Side Switching Lamps, Hammers, Displays, Memories z Low On-Resistance z Battery Operated Systems z Low Threshold z Power Supply Converter Circuits z Fast Switching Speed z Load/Power Switching Cell Phones, Pagers MARKING Equivalent Circuit Maximum ratings (T =25 unless otherwise noted) a Symbol Parameter Value Unit Drain-Source voltage V 20 DSS V 12 Typical Gate-Source Voltage V GS Drain Current-Continuous I 0.75 D A Drain Current -Pulsed(note1) I 3 DM Power Dissipation (note 2) P 150 mW D Thermal Resistance from Junction to Ambient R 833 /W JA Storage Temperature T 150 j Junction Temperature T -55 ~+150 stg www.jscj-elec.com 1 Rev. - 1.0MOSFET ELECTRICAL CHARACTERISTICS T =25 unless otherwise specified a Parameter Symbol Test Condition Min Typ Max Unit On/Off States Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID =250A 20 V Gate-Threshold Voltage(note 3) VGS(th) VDS =V , ID =250A 0.35 1.1 GS 20 Gate-Body Leakage Current I VDS =0V, VGS =10V A GSS 1 Zero Gate Voltage Drain Current I VDS =20V, VGS =0V A DSS VGS =4.5V, ID =650mA 260 380 Drain-Source On-State Resistance(note 3) RDS(on) VGS =2.5V, ID =550mA 310 450 m VGS =1.8V, ID =450mA 380 800 Forward Transconductance g VDS =10V, ID =800mA 1 S FS Dynamic Characteristics(note 4) Input Capacitance C 120 iss Output Capacitance C VDS =16V,VGS =0V,f =1MHz 20 pF oss Reverse Transfer Capacitance C 15 rss Switching Times (note 4) Turn-On Delay Time td 6.7 (on) Rise Time tr V =10V,ID=500mA, 4.8 DD ns Turn-Off Delay Time td(off) V =4.5V,R =10 17.3 GS G Fall Time tf 7.4 Drain-Source Diode Characteristics Drain-Source Diode Forward Voltage (note 3) V I =0.15A, VGS = 0V 1.2 V SD S Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. This test is performed with no heat sink at T =25. a 3. Pulse Test : Pulse Width300s, Duty Cycle0.5%. 4. These parameters have no way to verify. www.jscj-elec.com 2 Rev. - 1.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
CJ
Jiangsu Changjing Electronics Technology
Jiangsu Changjing Electronics Technology Co., Ltd.
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