8 7 6 5 1 2 3 4 JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD DFNWB56-8L-E Plastic-Encapsulate MOSFETS CJFB30H20 N-Channel Power MOSFET I V R TYP D (BR)DSS DS(on) DFNWB 5x6-8L-E 10 V 8.5 m 3 0 V 20A 12m 4.5V DESCRIPTION The CJFB30H20 uses advanced trench technology and design 1 to provide excellent R with low gate charge. It can be used in a DS(ON) wide variety of applications FEATURES Full Bridge switch Good stability and uniformity with high E AS Load switch Excellent package for good heat dissipation High density cell design for ultra low R Special process technology for high ESD DS(ON) Fully characterized avalanche voltage and capability current APPLICATIONS EQUIVALENT CIRCUIT SMPS and general purpose applications D13 Hard switched and high frequency circuits MARKING Q3 Q1 G1 G3 G G S 1D 2 S 3 D4 FB30H20 = Part No. FB Q2 Q4 G2 G4 30H20 G G Solid dot=Pin1 indicator XX S 24 XX=Date Code MAXIMUM RATINGS ( T =25 unless otherwise noted ) a Parameter Symbol Limit Unit Drain-Source Voltage V 30 V DS Gate-Source Voltage V 20 V GS Continuous Drain Current I 20 A D Pulsed Drain Current I 100 A DM (1) Single Pulsed Avalanche Energy E 70 mJ AS Power Dissipation P 1.5 W D Thermal Resistance from Junction to Ambient R 83.3 /W JA Junction Temperature T 150 J Storage Temperature Range T -55 ~+150 stg Lead Temperature for Soldering Purposes(1/8 from case for 10s) TL 260 (1).E condition: V =15V,L=0.14mH, R =25, Starting T = 25C AS DD G J (2).Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mm t 1 www.jscj-elec.com Rev. - 1.0 S D S D S D S D MOSFET ELECTRICAL CHARACTERISTICS T =25 unless otherwise specified a Parameter Symbol Test Condition Min Typ Max Unit Off characteristics Drain-source breakdown voltage V(BR) DSS VGS = 0V, ID =250A 30 V 1 Zero gate voltage drain current I VDS =30V, VGS =0V A DSS 100 Gate-body leakage current I VDS =0V, VGS =20V nA GSS On characteristics (note1) Gate-threshold voltage VGS(th) VDS =V , ID =250A 1.0 1.7 3.0 V GS VGS =10V, ID =10A 8.5 12 m Static drain-source on-sate resistance RDS(on) VGS =4.5V, ID =10A 12 18 m 15 Forward transconductance g VDS =5V, ID =20A S FS Dynamic characteristics (note 2) Input capacitance C 823 iss VDS =15V,VGS =0V, Output capacitance C 138 pF oss f =1MHz Reverse transfer capacitance C 100 rss Switching characteristics (note 2) Total gate charge Q 13 g V =15V, V =10V, DS GS nC Gate-source charge Q 3 gs I =9A D Gate-drain charge Q gd 4.5 Turn-on delay time td 10 (on) Turn-on rise time tr 8 V =15V,VGS=10V, DS ns RL=1.8,RGEN=3 Turn-off delay time td(off) 30 Turn-off fall time tf 5 Drain-Source Diode Characteristics Drain-source diode forward voltage(note1) V VGS =0V, I =10A 1.2 V SD S Continuous drain-source diode forward I 20 A S current Pulsed drain-source diode forward current I 100 A SM Reverse Recovery Time t TJ = 25C, IF = 10A 22 35ns rr Reverse Recovery Charge di/dt = 100A/s(Note1) Qrr 12 20 nC Notes: 1. Pulse Test : Pulse Width300s, duty cycle 2%. 2. Guaranteed by design, not subject to production. www.jscj-elec.com 2 Rev. - 1.0