JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate MOSFETS CJK1211 P-Channel Enhancement Mode Field Effect Transistor I V R MAX D (BR)DSS DS(on) SOT-23-3L 25m -4.5V -11A -12V 30m -2.5V 1. GATE 2. SOURCE 3. DRAIN Feature Application Advanced trench MOSFET process technology PWM application z Load switch Ultra low on-resistance with low gate charge Battery charge in cellular handset Equivalent Circuit MARKING D G S Maximum ratings ( T =25 unless otherwise noted) a Unit Value Parameter Symbol Drain-Source Voltage V -12 V DS Gate-Source Voltage V 8 V GS Continuous Drain Current I -11 A D Power Dissipation P 450 D mW Thermal Resistance from Junction to Ambient (t<5s)R 313 /W JA Junction Temperature T 150 J Storage Temperature T -55~+150 STG 1 Rev. - 1.0 www.jscj-elec.com A,Dec,2010 MOSFET ELECTRICAL CHARACTERISTICS unless otherwise specified T =25 a Parameter Symbol Test Condition Min Typ Max Unit Off characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =-250A -12 V Zero gate voltage drain current IDSS VDS =-12V,VGS = 0V -1 A Gate-source leakage current IGSS VGS =8V, VDS = 0V 100 nA On characteristics VGS =-4.5V, ID =-6A m 14 25 Drain-source on-resistance RDS(on) (note 1) VGS =- 2.5V, ID =-6A m 19 30 Forward tranconductance (note 1) gFS VDS =-5V, ID =-6A 9 19 S Gate threshold voltage VGS(th) VDS =V , ID =-250A -0.5 -0.8 -1.2 V GS Dynamic characteristics (note 2) Input capacitance Ciss 2700 pF VDS =-10V,VGS =0V,f =1MHz Output capacitance Coss 680 pF Reverse transfer capacitance Crss pF 590 Switching characteristics (note 2) Turn-on delay time td(on) 11 ns Turn-on rise time tr V =-10V,V =-4.5V, 35 ns DD GEN =-1A,R =10 ID g Turn-off delay time td(off) 30 ns Turn-off fall Time tf 10 ns Drain-source diode characteristics and maximum ratings Diode forward voltage (note 1) V V =0V, I =-2A -0.8 -1.2 V SD GS S Note : 1. Pulse Test : Pulse width300s, duty cycle2%. 2. These parameters have no way to verify. 2 Rev. - 1.0 www.jscj-elec.com