X-On Electronics has gained recognition as a prominent supplier of CJK3401AH MOSFETs across the USA, India, Europe, Australia, and various other global locations. CJK3401AH MOSFETs are a product manufactured by Changjing Electronics Technology. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

CJK3401AH Changjing Electronics Technology

CJK3401AH electronic component of Changjing Electronics Technology
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Part No.CJK3401AH
Manufacturer: Changjing Electronics Technology
Category: MOSFETs
Description: MOSFET SOT-23-3L RoHS
Datasheet: CJK3401AH Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10: USD 0.0861 ea
Line Total: USD 0.86 
Availability - 0
MOQ: 10  Multiples: 10
Pack Size: 10
Availability Price Quantity
0
Ship by Mon. 09 Dec to Thu. 12 Dec
MOQ : 10
Multiples : 10
10 : USD 0.0861
100 : USD 0.0711
300 : USD 0.0636
3000 : USD 0.058
6000 : USD 0.0535
9000 : USD 0.0512

   
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Reverse Transfer Capacitance Crss@Vds
Type
Input Capacitance Ciss@Vds
Total Gate Charge Qg@Vgs
Operating Temperature
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We are delighted to provide the CJK3401AH from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CJK3401AH and other electronic components in the MOSFETs category and beyond.

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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate MOSFETS CJK3401AH P-Channel Enhancement Mode Field Effect Transistor I V R MAX D (BR)DSS DS(on) SO T-23-3L 50m - 10V -4.2A - 30V 60 m -4.5V m -2.5V 85 FEATURE APPLICATION z High dense cell design for extremely low R DS(ON) z Load Switch for Portable Devices z z Exceptional on-resistance and maximum z DC/DC Converter DC current capability Equivalent Circuit MARKING D .R1H G S Solid dot = Green molding compound device, if none,the normal device. Maximum ratings ( T =25 unless otherwise noted) a Unit Value Parameter Symbol Drain-Source Voltage V -30 V DS Gate-Source Voltage V 12 V GS Continuous Drain Current I -4.2 A D I Drain Current-Pulsed (not 1) DM -27 A Power Dissipation P 450 D mW Thermal Resistance from Junction to Ambient (t<5s)R 313 /W JA Junction Temperature T 150 J Storage Temperature T -55~+150 STG 1 Rev. - 1.0 www.jscj-elec.com A,Dec,2010 MOSFET ELECTRICAL CHARACTERISTICS unless otherwise specified T =25 a Parameter Symbol Test Condition Min Typ Max Unit Off characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =-250A -30 V Zero gate voltage drain current IDSS VDS =-24V,VGS = 0V -1 A Gate-source leakage current IGSS VGS =12V, VDS = 0V 100 nA On characteristics m VGS =-10V, ID =-4A 41 50 Drain-source on-resistance RDS(on) VGS =-4.5V, ID =-3.5A 47 60 m (note 1) VGS =-2.5V,ID=-2.5A 60 85 m Forward tranconductance (note 1) gFS VDS =-5V, ID =-5A 7 S Gate threshold voltage VGS(th) VDS =V , ID =-250A -0.7 -1.3 V GS Dynamic characteristics (note 2) Input capacitance Ciss 1050 pF VDS =-15V,VGS =0V,f =1MHz Output capacitance Coss 127 pF Reverse transfer capacitance Crss 85 pF Switching characteristics (note 2) Turn-on delay time td(on) 6.5 ns Turn-on rise time tr 3.5 ns V =-10V,V =-15V, GS DS R =3.6,R =6 Turn-off delay time td(off) L GEN 40 ns Turn-off fall Time tf 13 ns Drain-source diode characteristics and maximum ratings Diode forward voltage (note 1) V I =-1A,V =0V -1 V SD S GS Note : 1. Pulse Test : Pulse width300s, duty cycle2%. 2. These parameters have no way to verify. 2 Rev. - 1.0 www.jscj-elec.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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