JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate MOSFETS CJK8804 N-Channel Enhancement Mode Field Effect Transistor I V R TYP D (BR)DSS DS(on) SOT-23-3L 9.8 10.5 7 11 .1 1. GATE 13.3 2. SOURCE 3. DRAIN D FEATURE APPLICATION z High dense cell design for extremely low R DS(ON) z Load/Power Switching z Exceptional on-resistance and maximum DC current capability z Interfacing Switching z ESD Protected Gate Equivalent Circuit MARKING .8804 Solid dot = Green molding compound device, if none,the normal device. Maximum ratings ( T =25 unless otherwise noted) a Parameter Symbol Value Unit Drain-Source Voltage V 20 V DS Gate-Source Voltage VGS 12 V Continuous Drain Current I 7 A D Pulsed Drain Current I * 25 A DM P Power Dissipation D 500 mW Thermal Resistance from Junction to Ambient R 249 /W JA Junction Temperature T 150 j Storage Temperature T -55~+150 stg Lead Temperature for Soldering Purposes(1/8 from case for 10 s) T 260 L * Repetitive rating : Pulse width limited by junction temperature. 1 Rev. - 1.0 www.jscj-elec.com MOSFET ELECTRICAL CHARACTERISTICS T =25 unless otherwise specified a Parameter Symbol Test Condition Min Typ Max Unit STATIC PARAMETERS Drain-source breakdown voltage V (BR) DSS VGS = 0V, ID =250A 20 V Zero gate voltage drain current IDSS VDS =16V,VGS = 0V 1 A Gate-body leakage current IGSS VGS =10V, VDS = 0V 5 A Gate threshold voltage (note 1) VGS(th) VDS =V , ID =250A 0.5 0.75 1 V GS 9.8 13 m VGS =10V, ID =3A 10.5 14 m VGS =4.5V, ID =3A 11 .1 Drain-source on-resistance (note 1) RDS(on) VGS =3.8V, ID =3A 15.5 m 13.3 VGS =2.5V, ID =3A 19 m S Forward tranconductance (note 1) gFS VDS =5V, ID =3A 17 Diode forward voltage(note 1) V I =1A, VGS = 0V 1 V SD S DYNAMIC PARAMETERS (note 2) Input Capacitance C 1800 pF iss Output Capacitance C VDS =10V,VGS =0V,f =1MHz 230 pF oss Reverse Transfer Capacitance C 200 pF rss nC Total gate charge Q 17.9 g Gate-source charge Q VDS =10V,VGS =4.5V,ID =3A 1.5 nC gs Gate-drain charge Q 4.7 nC gd SWITCHING PARAMETERS(note 2) Turn-on delay time td(on) 2.5 ns Turn-on rise time tr V =10V,V =10V, 7.2 ns GS DS R =1.2 ,R =3 Turn-off delay time td(off) L GEN 49 ns Turn-off fall time tf 10.8 ns Notes : 1. Pulse Test : Pulse width 300s, duty cycle 0.5%. 2. Guaranteed by design, not subject to production testing. 2 Rev. - 1.0 www.jscj-elec.com