JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23-6L Plastic-Encapsulate MOSFETS CJL2013 Dual N-Channel MOSFET I V R TYP D (BR)DSS DS(on) SOT-23-6L m 4.5 V 12.2 12.9 m 3.8 V 20V 6 A 13.6 m 3.1 V 14.9 m 2.5V FEATURE APPLICATION z TrenchFET Power MOSFET z Battery Protection z Excellent R DS(on) z Load Switch z Low Gate Charge z Power Management z High Power and Current Handing Capability z Surface Mount Package MARKING Equivalent Circuit G1 D1,D2 G2 6 5 4 L2013=Device code L2013 Solid point=Pin1 positioning point XX XX=Date Code 1 3 2 S1 D1,D2 S2 ABSOLUTE MAXIMUM RATINGS (T =25 unless otherwise noted) a Parameter Symbol Value Unit Drain-Source Voltage V 20 V DS Gate-Source Voltage V 10 V GS Continuous Drain Current I 6 A D Pulsed Drain Current (note 1) I 25 A DM Thermal Resistance from Junction to Ambient (note 2) R 83.3 JA /W Operation Junction and Storage Temperature Range T ,T -55~+150 STG J Lead Temperature for Soldering Purposes(1/8 from case for 10 s) T 260 L 1 Rev. - 2.0 www.jscj-elec.com T =25 unless otherwise specified a Parameter Symbol Test Condition Min Typ Max Unit STATIC CHARACTERICTISCS Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250A 20 V Zero gate voltage drain current IDSS VDS =16V,VGS = 0V 1 A Gate-body leakage current IGSS VGS =10V, VDS = 0V 100 nA Gate threshold voltage (note 3) VGS(th) VDS =V , ID =250A 0.5 0.7 1.0 V GS VGS =4.5V, ID =3A 10.5 12.2 14.0 m VGS =3.8V, ID =3A 11.4 12.9 m 14.5 Drain-source on-resistance (note 3) RDS(on) m VGS =3.1V, ID =3A 12.0 13.6 16.0 13.3 VGS =2.5V, ID =3A 14.9 20.0 m Forward tranconductance (note 3) gFS VDS =5V, ID =4.5A 10 S Diode forward voltage (note 3) V I =1.25A, VGS = 0V 1.2 V SD S DYNAMIC CHARACTERICTISCS (note4) Input Capacitance C 935 pF iss Output Capacitance C VDS =8V,VGS =0V,f =1MHz 170 pF oss Reverse Transfer Capacitance C 145 pF rss SWITCHING CHARACTERICTISCS (note 4) Turn-on delay time td(on) 16 ns Turn-on rise time tr 8 ns V =10V,V =4V, DD GS I =1A,R =10 Turn-off delay time td(off) D GEN 48 ns Turn-off fall time tf 14 ns Total Gate Charge Q 16 nC g nC Gate-Source Charge Q VDS =10V,VGS =4.5V,ID=4A 1.3 gs Gate-Drain Charge Q 1.8 nC gd Notes : 1.Repetitive ratingPluse width limited by maximum junction temperature 2.Surface mounted on FR4 board using 1 square inch pad size,1oz single-side copper. 3. Pulse test : Pulse width300s, duty cycle2%. 4. Guaranteed by design, not subject to production. 2 Rev. - 2.0 www.jscj-elec.com 026)(7 (/(&75,& / &+ 5 &7(5,67,&6