JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD DFNWB2X2-6L-U Plastic-Encapsulate MOSFETS CJMNP517 N Channel +P Channel MOSFET I V R MAX D (BR)DSS DS(on) DFNWB2X2-6L-U 10 V 24m 27m 4.5V 12 V 6 A 42m 2.5V 72m 1.8V -4.5 V 45m - 12 V 60m -2.5V -4. 1 A 90m -1.8V FEATURE APPLICATION Surface Mount Package Power Management In Note Book Super High Density Cell Design for Portable Equipment Extremely Low R DS(ON) Battery Powered System Exceptional On-resistance and DC/DC Converter Maximum DC Current Capability Load Switch Equivalent Circuit MARKING: 517 = Device code YY=Code ABSOLUTE MAXIMUM RATINGS (T =25 unless otherwise noted) a Parameter Symbol Value Unit N-MOSFET Drain-Source Voltage V 12 V DS Gate-Source Voltage V 12 V GS Continuous Drain Current (note 1) I 6 A D Pulsed Drain Current (tp=10us) I 24 A DM Continous Source-Drain Diode Current I 6 A S P-MOSFET Drain-Source Voltage V -12 V DS Gate-Source Voltage V 12 V GS Continuous Drain Current (note 1) I -4.1 A D Pulsed Drain Current (tp=10us) I -16.4 A DM Continous Source-Drain Diode Current I -4.1 A S Temperature and Thermal Resistance Thermal Resistance from Junction to Ambient (note 1) R 167 /W JA Junction Temperature T 150 J Storage Temperature T -55~+150 STG Lead Temperature for Soldering Purposes(1/8 from case for 10 s) T 260 L www.jscj-elec.com 1 Rev. - 1.0N-ch MOSFET ELECTRICAL CHARACTERISTICS(T =25 unless otherwise noted) a Parameter Symbol Test Condition Min Typ Max Unit STATIC CHARACTERISTICS Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250A 12 V Zero gate voltage drain current IDSS VDS =16V,VGS = 0V 1 A Gate-body leakage current IGSS VGS =12V, VDS = 0V 100 nA Gate threshold voltage (note 2) VGS(th) VDS =V , ID =250A 0.5 1 V GS VGS =10V, ID =6A 24 m 18 21 VGS =4.5V, ID =5A 27 m Drain-source on-resistance(note 2) RDS(on) VGS =2.5V, ID =4A 27 42 m VGS =1.8V, ID =2A 44 74 m Forward tranconductance(note 2) gFS VDS =5V, ID =3.8A 4 S Diode forward voltage V I =1A, VGS = 0V 1 V SD S DYNAMIC CHARACTERISTICS (note 4) Input Capacitance C 630 pF iss pF Output Capacitance C VDS =10V,VGS =0V,f =1MHz 164 oss pF Reverse Transfer Capacitance C 137 rss SWITCHING CHARAC TERISTICS (note 3,4) Turn-on delay time td(on) 5.5 ns Turn-on rise time tr 14 ns V =5V,V =10V, GS DS R =6R =1.7 Turn-off delay time td(off) GEN L 29 ns Turn-off fall time tf 10.2 ns Total Gate Charge Q 12 nC g V =10V,I =6A, DS D Gate-Source Charge Q 1 nC gs V =10V GS Gate-Drain Charge Q 2 nC gd P-ch MOSFET ELECTRICAL CHARACTERISTICS(T =25 unless otherwise noted) a Parameter Symbol Test Condition Min Typ Max Unit STATIC CHARACTERISTICS Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =-250A -12 V Zero gate voltage drain current IDSS VDS =-8V,VGS = 0V -1 A Gate-body leakage current IGSS VGS =8V, VDS = 0V 100 nA Gate threshold voltage (note 2) VGS(th) VDS =V , ID =-250A -0.5 -0.9 V GS VGS =-4.5V, ID =-3.5A 45 m Drain-source on-resistance(note 2) RDS(on) VGS =-2.5V, ID =-3A 60 m VGS =-1.8V, ID =-2A 90 m Forward tranconductance(note 2) gFS VDS =-5V, ID =-4.1A 6 S Diode forward voltage V I =-3.3A, VGS = 0V -1.2 V SD S DYNAMIC CHARACTERISTICS (note 4) Input Capacitance C 740 pF iss pF Output Capacitance C VDS =-4V,VGS =0V,f =1MHz 290 oss Reverse Transfer Capacitance C 190 pF rss SWITCHING CHARACTERISTICS (note 3,4) Turn-on delay time td(on) 20 ns V =-4.5V,V =-4V, GEN DD Turn-on rise time tr 53 ns I =-3.3A,R =1 D G Turn-off delay time td(off) 48 ns R =1.2 L Turn-off fall time tf 20 ns Total Gate Charge Q 9 nC g V =-4V,I =-4.1A, DS D Gate-Source Charge Q 1.2 nC gs V =-2.5V GS Gate-Drain Charge Q 1.6 nC gd Notes : 1.Surface mounted on FR4 board using the minimum recommended pad size. 2. Pulse Test : Pulse width=300s, duty cycle 2%. 3. Switching characteristics are independent of operating junction temperature. 4. Graranted by designnot subject to producting. www.jscj-elec.com 2 Rev. - 1.0 026)(7 (/(&75,& / &+ 5 &7(5,67,&6