CJMPD11 Dual P-Channel Power MOSFET I V R MAX D (BR)DSS DS(on) 110m -4.5 V -2.3 A -20V 140m -2.5 V General Description The CJMPD11 uses advanced trench technology and design to Provide excellent R with low gate charge. This device is suitable for DS(on) use in DC-DC conversion applications. 11 Parameter Symbol Value Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS 8 V Continuous Drain Current I -2.3 A D Pulsed Drain Current (t=300s) IDM -10 A Power Dissipation PD 0.35 W Thermal Resistance from Junction to Ambient R 357 /W JA Junction Temperature TJ 150 Storage Temperature TSTG -55~ +150 Rev. - 1.0 www.jscj-elec.com 1 Parameter Symbol Test Condition Min Type Max Unit Static Characteristics Drain-source breakdown voltage V V = 0V, I =-250A -20 V (BR)DSS GS D Zero gate voltage drain current I V =-16V,V = 0V -1 A DSS DS GS Gate-body leakage current I V =8V, V = 0V 100 nA GSS GS DS Gate threshold voltage VGS(th) VDS =VGS, ID =-250A -0.4 -0.7 -1 V VGS =-4.5V, ID =-3A 70 110 a Drain-source on-resistance R m DS(on) VGS =-2.5V, ID =-2A 110 140 a Forward tranconductance g V =-5V, I =-2A 5 S FS DS D b Dynamic characteristics Input Capacitance C 405 iss Output Capacitance Coss VDS =-10V,VGS =0V,f =1MHz 75 pF Reverse Transfer Capacitance Crss 55 Gate resistance Rg f =1MHz 6 Total Gate Charge Q 3.3 12 g Gate-Source Charge Q V =-10V,V =-2.5V,I =-3A 0.7 nC gs DS GS D Gate-Drain Charge Q 1.3 gd Turn-on delay time td(on) 11 Turn-on rise time tr V =-10V,V =-4.5V,I =-1A 35 DD GEN D ns R =10,R =1 Turn-off delay time td(off) L GEN 30 Turn-off fall time t 10 f Source-Drain Diode characteristics Diode forward current I T =25 -2.3 A S C a Diode pulsed forward current ISM -10 A Diode Forward voltage VDS VGS =0V, IS=-1.3A -1.2 V Notes : a.Pulse Test : Pulse Width < 300s, Duty Cycle 2%. b.Guaranteed by design, not subject to production testing. Rev. - 1.0 www.jscj-elec.com 2