JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD DFNWB2 5-6L-C Plastic-Encapsulate MOSFETS CJND2004 Dual N-Channel MOSFET DFNWB2X5-6L-A I V R TYP D (BR)DSS DS(on) 8.5 m 4.5V m 8.8 4.0V 2 0V 10A 9 m 3.8V 10 m 3.1V 11 m 2.5V DESCRIPTION The CJND2004 uses advanced ench tr technology to provide excellent R and low gate charge. It is ESD protected. This device is DS(ON) suitable for use as a uni-directional or bi-directional load switch,facilitated by its common-drain configuration. MARKING: Equivalent Circuit G1 G2 D1/D2 S1 S2 S1 S2 Top Back MAXIMUM RATINGS (T =25 unless otherwise noted) a Parameter Symbol Value Unit Drain-Source Voltage V 20 V DS Gate-Source Voltage V 12 V GS Continuous Drain Current I 10 A D Pulsed Drain Current I * 50 A DM Thermal Resistance from Junction to Ambient R 71.5 /W JA Junction Temperature T 150 j Storage Temperature T -55~+150 stg Lead Temperature for Soldering Purposes(1/8 from case for 10 s) T 260 L 1 Rev. - 1.0 www.jscj-elec.com MOSFET ELECTRICAL CHARACTERISTICS unless otherwise specified T =25 a Parameter Symbol Test Condition Min Typ Max Unit STATIC PARAMETERS Drain-source breakdown voltage V (BR) DSS VGS = 0V, ID =250A 20 V Zero gate voltage drain current IDSS VDS =16V,VGS = 0V 1 A VGS =4.5V, VDS = 0V 1 A Gate-body leakage current IGSS VGS =8V, VDS = 0V 10 A Gate threshold voltage (note 1) VGS(th) VDS =V , ID =250A 0.4 1 V GS 7 8.5 10 m VGS =4.5V, ID =3A VGS =4.0V, ID =3A 7.3 8.8 10.3 m Drain-source on-resistance (note 1) RDS(on) VGS =3.8V, ID =3A 9 10.7 m 7.5 VGS =3.1V, ID =3A 8.5 10 11.5 m VGS =2.5V, ID =3A 9.5 13.5 m 11 Forward tranconductance (note 1) gFS VDS =5V, ID =7A 9 36 S Diode forward voltage(note 1) V I =1A, VGS = 0V 1 V SD S DYNAMIC PARAMETERS (note 2) Input Capacitance C pF iss 1950 Output Capacitance C VDS =10V,VGS =0V,f =1MHz 250 pF oss Reverse Transfer Capacitance C 210 pF rss Total gate charge Q nC g 17 Gate-source charge Q VDS =10V,VGS =4.5V,ID =7A 2.0 nC gs Gate-drain charge Q 5.1 nC gd SWITCHING PARAMETERS(note 2) Turn-on delay time td(on) 2.2 ns Turn-on rise time tr 5.9 ns V =5V,V =10V, GS DD R =1.35,R =3 Turn-off delay time td(off) L GEN 40 ns Turn-off fall time tf 90 ns Drain-Source Diode Charact eristics I Diode Forward Current S - - 6.0A Notes : 1. Pulse Test : Pulse width300s, duty cycle0.5%. 2. Guaranteed by design, not subject to production testing. 2 Rev. - 1.0 www.jscj-elec.com