JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS CJQ07N10 N-Channel Power MOSFET DESCRIPTION SOP8 The device is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent R and gate charge for most of DSON the synchronous buck converter applications . 100% EAS guaranteed with full function reliability approved. D D D D FEATURES 8 7 6 5 Advanced high cell density Trench technology Super Low Gate Charge Green Device Available APPLICATIONS 2 3 1 4 Secondary Synchronous Rectifier S S G S LED TV Back Light MARKING Q07N10= Device code Solid dot=Pin1 indicator Solid dot = Green molding compound device, if none, the normal device Front side YY=Date Code MAXIMUM RATINGS ( T =25 unless otherwise noted ) a Parameter Symbol Limit Unit Drain-Source Voltage V 100 V DS Gate-Source Voltage V 20 V GS Continuous Drain Current I 7 A D Pulsed Drain Current I 28 A DM (1) Single Pulsed Avalanche Energy E 16 mJ AS Power Dissipation P 1.4 W D Thermal Resistance from Junction to Ambient R 89 /W JA Junction Temperature T 150 J Storage Temperature Range T -55 ~+150 stg Lead Temperature for Soldering Purposes(1/8 from case for 10s) T 260 L (1).E condition: V =25V,L=0.1mH, R =25, Starting T = 25C AS DD G J www.jscj-elec.com 1 Rev. - 1.0ELECTRICAL CHARACTERISTICS(T =25 unless otherwise specified) a Parameter Symbol Test Condition Min Typ Max Unit Off characteristics Drain-source breakdown voltage V(BR) DSS VGS = 0V, ID =250A 100 V 1 Zero gate voltage drain current I VDS =80V, VGS =0V A DSS 100 Gate-body leakage current I VDS =0V, VGS =20V nA GSS On characteristics (note1) Gate-threshold voltage VGS(th) VDS =V , ID =250A 1.2 3.0 V GS VGS =10V, ID =7A 25 28 m Static drain-source on-sate resistance RDS(on) VGS =4.5V, ID =5A 30 38 m Forward transconductance g VDS =5V, ID =7A 22 S FS Dynamic characteristics (note 2) Input capacitance C 1848 iss VDS =15V,VGS =0V, Output capacitance C 276 pF oss f =1MHz Reverse transfer capacitance C 97.9 rss Switching characteristics (note 2) Total gate charge Q 31.9 g V =80V, V =10V, DS GS nC Gate-source charge Q 5.5 gs I =7A D Gate-drain charge Q gd 8.8 Turn-on delay time td 11.4 (on) V =50V,ID=7A, DD Turn-on rise time tr 27.2 V =10V,R =3.3, ns GS G Turn-off delay time td(off) 34.7 R =6.7 L Turn-off fall time tf 16.6 f =1MHz, V =0V, DS Gate Resistance R 1.9 g V =0V, GS Drain-Source Diode Characteristics Drain-source diode forward voltage(note1) V VGS =0V, I =1A 1.2 V SD S Continuous drain-source diode forward I 7 A S current Pulsed drain-source diode forward current I 28 A SM Notes: 1. Pulse Test : Pulse Width300s, duty cycle 2%. 2. Guaranteed by design, not subject to production testing. www.jscj-elec.com 2 Rev. - 1.0