JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD CJQ4406 N-Channel Power MOSFET I V R MAX D (BR)DSS DS(on) SOP8 12m 10V 3 0 V 10A 16m 4.5V DESCRIPTION The CJQ4406 uses advanced trench technology to provide excellent R DS(ON) with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications. APPLICATIONS z High side switch in SMPS z Load Switch MARKING Equivalent Circuit D D D D 8 7 6 5 Q4406= Device code Solid dot=Pin1 indicator Solid dot = Green molding compound device, if none, the normal device YY=Date Code 23 1 4 S S S G Front side MAXIMUM RATINGS ( T =25 unless otherwise noted ) a Parameter Symbol Limit Unit Drain-Source Voltage V 30 V DS Gate-Source Voltage V 20 V GS Continuous Drain Current I 10 A D Pulsed Drain Current I 40 A DM (1) Single Pulsed Avalanche Energy E 105 mJ AS Power Dissipation P 1.4 W D Thermal Resistance from Junction to Ambient R 89 /W JA Junction Temperature T 150 J Storage Temperature Range T -55 ~+150 stg Lead Temperature for Soldering Purposes(1/8 from case for 10s) T 260 L (1).E condition: V =50V,L=0.5mH, R =25, Starting T = 25C AS DD G J www.jscj-elec.com 1 Rev. - 1.0MOSFET ELECTRICAL CHARACTERISTICS T =25 unless otherwise specified a Parameter Symbol Test Condition Min Typ Max Unit Off characteristics Drain-source breakdown voltage V(BR) DSS VGS = 0V, ID =250A 30 V 1 Zero gate voltage drain current I VDS =30V, VGS =0V A DSS 100 Gate-body leakage current I VDS =0V, VGS =20V nA GSS On characteristics (note1) Gate-threshold voltage VGS(th) VDS =V , ID =250A 1.0 1.5 3.0 V GS VGS =10V, ID =12A 7.6 12 m Static drain-source on-sate resistance RDS(on) VGS =4.5V, ID =10A 11 16 m Forward transconductance g VDS =5V, ID =10A 15 S FS Dynamic characteristics (note 2) Input capacitance C 1550 iss VDS =15V,VGS =0V, Output capacitance C 300 pF oss f =1MHz Reverse transfer capacitance C 180 rss Switching characteristics (note 2) Total gate charge Q 13 g V =15V, V =5V, DS GS Gate-source charge Q 5.5 nC gs I =10A D Gate-drain charge Q 3.5 gd Turn-on delay time td 30 (on) V =25V,ID=1A, DD Turn-on rise time tr 20 V =10V,R =6, ns GS G Turn-off delay time td(off) 100 R =6.7 L Turn-off fall time tf 80 f =1MHz, V =0V, DS Gate Resistance R 0.8 2.4 g V =0V, GS Drain-Source Diode Characteristics Drain-source diode forward voltage(note1) V VGS =0V, I =10A 1.2 V SD S Continuous drain-source diode forward I 10 A S current Pulsed drain-source diode forward current I 40 A SM Notes: 1. Pulse Test : Pulse Width300s, duty cycle 2%. 2. Guaranteed by design, not subject to production testing. www.jscj-elec.com 2 Rev. - 1.0