JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS CJQ4435S P-Channel Power MOSFET I V R TYP D (BR)DSS DS(on) SOP8 18m -10V -30V -7.3A 26m -4.5V DESCRIPTION The CJQ4435S uses advanced trench technology to provide excellent R , shoot-through immunity, body diode characteristics and ultra-low gate DS(on) resistance. This device is ideally suited for use as a low side switch in Notebook CPU core power conversion. AP PLICATIONS z Battery itch Sw z Load Switch MARKING Equivalent Circuit Q4435S= Device code DDDD 8 7 6 5 Solid dot=Pin1 indicator Q4435S Solid dot = Green molding compound device, . YY if none, the normal device YY=Date Code 12 3 4 SSGS MAXIMUM RATINGS ( T =25 unless otherwise noted ) a Parameter Symbol Limit Unit Drain-Source Voltage V -30 V DS Gate-Source Voltage V 20 V GS Continuous Drain Current I -7.3 A D Pulsed Drain Current I -27 A DM (1) Single Pulsed Avalanche Energy E 20 mJ AS Power Dissipation P 1.4 W D Thermal Resistance from Junction to Ambient R 89 /W JA Junction Temperature T 150 J Storage Temperature Range T -55 150~+ stg (1).E condition: V =-20V,L=0.5mH, R =25, Starting T = 25C AS DD G J 1 Rev. - 1.0 www.jscj-elec.com T =25 unless otherwise specified a Parameter Symbol Test Condition Min Typ Max Unit Off characteristics Drain-source breakdown voltage V(BR) DSS VGS = 0V, ID =-250A -30 V -1 Zero gate voltage drain current I VDS =-30V, VGS =0V A DSS 100 Gate-body leakage current I VDS =0V, VGS =20V nA GSS On characteristics (note1) Gate-threshold voltage VGS(th) VDS =V , ID =-250A -1.0 -1.5 -3.0 V GS VGS =-10V, ID =-7.3A m 18 24 Static drain-source on-sate resistance RDS(on) VGS =-4.5V, ID =-6.9A 26 35 m Forward transconductance g VDS =-10V, ID =-7.3A 12 S FS Dynamic characteristics (note 2) Input capacitance C 1400 iss VDS =-15V,VGS =0V, Output capacitance C 165 pF oss f =1MHz Reverse transfer capacitance C 145 rss Switching characteristics (note 2) V =-15V, V =-10V, DS GS 42 I =-7.3A Total gate charge Q D g 25 nC V =-15V, V =-4.5V, DS GS Gate-source charge Q 7 gs I =-7.3A D Gate-drain charge Q 12 gd Turn-on delay time td 15 (on) V =-15V,ID=-1A, DD Turn-on rise time tr 15 V =-10V,R =1, ns GS G Turn-off delay time td(off) 70 R =15 L Turn-off fall time tf 25 Drain-Source Diode Characteristics Drain-source diode forward voltage(note1) V VGS =0V, I =-2A -1.2 V SD S Continuous drain-source diode forward I -7.3 A S current Pulsed drain-source diode forward current I -27 A SM Notes: 1. Pulse Test : Pulse Width300s, duty cycle 2%. 2. Guaranteed by design, not subject to production testing. 2 Rev. - 1.0 www.jscj-elec.com 026)(7 (/(&75,& / &+ 5 &7(5,67,&6