JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD CJQ4503 N-and P-Channel Enhancement Mode Power MOSFET I V R MAX D (BR)DSS DS(on) SOP8 10 V 28m 3 0 V 6.9 A 42m 4.5V 36m - 10 V - 30 V -6.3 A 55m -4.5V DESCRIPTION Advance Power MOSFETs provide the designer with the best combination of fast switching, ruggedized device desigh, low on-resistance and cost -effectiveness. The SOP8 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. MARKING: Equivalent Circuit D1 D1 D2 D2 8 7 5 6 Q4503= Device code YY=Date Code Q4503 Solid dot = Pin1 indicator 12 3 4 YY G1 S1 S2 G2 Solid dot = Green molding compound device, if none,the normal device. =25 unless otherw Maximum ratings ( T ise noted) a Parameter SymbolN-Channel P-Channel Unit Drain-Source Voltage V 30 -30 DS V Gate-Source Voltage V 20 20 GS a Continuous Drain Current T =25 6.9 -6.3 a I D T =70 A a 5.5 -5 b Pulsed Drain Current I 20 -20 DM Power Dissipation P 1.4 W D Thermal Resistance from Junction to Ambient R 89 /W JA Operating Junction Temperature T 150 J Storage Temperature T -55 ~+150 STG Notes : a. These tests are performed with infinite heat sink. b.Pulse width by Max.junction temperature. www.jscj-elec.com 1 Rev. - 1.0 unless otherwise specified T =25 a Parameter Symbol Test Condition Min Typ Max Units Static V =0, ID =250A N-Ch 30 GS Drain-source breakdown voltage V(BR)DSS V V =0, ID =-250A P-Ch -30 GS VDS =V , ID =250A N-Ch 1 1.5 3 GS Gate-threshold voltage VGS(th) V VDS =V , ID =-250A P-Ch -1 -1.7 -3 GS N-Ch Gate-body leakage I VDS =0V, VGS =20V 100 nA GSS P-Ch VDS =30V, VGS =0V N-Ch 1 Zero gate voltage drain current I A DSS VDS =-30V, VGS =0V P-Ch -1 28 VGS =10V, ID =6A N-Ch 10 VGS =-10V, ID =-6A P-Ch 16 36 c Drain-source on-resistance R m DS(on) VGS =4.5V, ID =4A N-Ch 14 42 VGS =-4.5V, ID =-4A P-Ch 25 55 VDS =10V, ID =6A N-Ch Forward transconductance g 4 S fs VDS =-10V, ID =-6A P-Ch I =1.7A,V=0V N-Ch 1.2 S GS c Diode forward voltage V V SD I =-1.7A,V=0V P-Ch -1.2 S GS Dynamic N-Ch 13.5 c Total gate charge Q g P-Ch 20 N-Channel VDS =24V,VGS =4.5V,ID =6A N-Ch 1.4 d Gate-source charge Q nC gs P-Channel P-Ch 2 VDS =-24V,VGS =-4.5V,ID =-6A N-Ch 4.7 d Q Gate-drain charge gd P-Ch 7 N-Ch 5 c Turn-on delay time td (on) P-Ch 8 N-Channel N-Ch 8 V =20V,R =20, I =1A, DS D D d Rise time tr P-Ch 7 V =10V,R =3.3 GS G ns P-Channel N-Ch 18.5 d td(off) Turn-off delay time V =-15V,R =15, I =-1A, DS D D P-Ch 34 V =-10V,R =3.3 GS G N-Ch 9 d Fall time tf P-Ch 26 N-Ch 770 d Input Capacitance C iss P-Ch 1380 N-Channel VDS =25V,VGS =0V,f =1MHz N-Ch 80 d Output Capacitance C pF oss P-Channel P-Ch 150 VDS =-25V,VGS =0V,f =1MHz N-Ch 75 d Reverse Transfer Capacitance C rss P-Ch 140 Notes : c. Pulse Test : Pulse width 300s, duty cycle 2%. d. Guaranteed by design, not subject to production testing. www.jscj-elec.com 2 Rev. - 1.0 026)(7 (/(&75,& / &+ 5 &7(5,67,&6