JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS CJQ4606 N-and P-Channel Enhancement Mode Power MOSFET I V R TYP D (BR)DSS DS(on) SOP8 10 V 19m 6.9 A 3 0 V 28m 4.5V 29m - 10 V - 30 V -6.0A 47m -4.5V DESCRIPTION Advance Power MOSFETs provide the designer with the best combination of fast switching, ruggedized device desigh, low on-resistance and cost -effectiveness. The SOP8 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. MARKING: Equivalent Circuit D1 D1 D2 D2 8 7 5 6 Q4606= Device code YY=Date Code Q4606 Solid dot = Pin1 indicator 12 3 4 YY G1 S1 S2 G2 Solid dot = Green molding compound device, if none,the normal device. =25 unless otherwise noted) Maximum ratings ( T a Parameter SymbolN-Channel P-Channel Unit Drain-Source Voltage V 30 -30 DS V Gate-Source Voltage V 20 20 GS a Continuous Drain Current T =25 6.9 -6.0 a I D T =70 A a 5.5 -5 b Pulsed Drain Current I 20 -20 DM Power Dissipation P 1.4 W D Thermal Resistance from Junction to Ambient R 89/W JA Operating Junction Temperature T 150 J Storage Temperature T -55 +150 ~ STG Notes : a. These tests are performed with infinite heat sink. b.Pulse width by Max.junction temperature. 1 Rev. - 1.0 www.jscj-elec.com unless otherwise specified T =25 a Parameter Symbol Test Condition Min Typ Max Units Static V =0, ID =250A N-Ch 30 GS Drain-source breakdown voltage V(BR)DSS V V =0, ID =-250A P-Ch -30 GS VDS =V , ID =250A N-Ch 1 1.5 3 GS Gate-threshold voltage VGS(th) V VDS =V , ID =-250A P-Ch -1 -1.7 -3 GS N-Ch Gate-body leakage I VDS =0V, VGS =20V 100 nA GSS P-Ch VDS =30V, VGS =0V N-Ch 1 Zero gate voltage drain current I A DSS VDS =-30V, VGS =0V P-Ch -1 28 VGS =10V, ID =6A N-Ch 19 VGS =-10V, ID =-6A P-Ch 29 36 c Drain-source on-resistance R m DS(on) VGS =4.5V, ID =4A N-Ch 28 42 VGS =-4.5V, ID =-4A P-Ch 47 55 VDS =10V, ID =6A N-Ch Forward transconductance g 4 S fs VDS =-10V, ID =-6A P-Ch I =1.7A,V=0V N-Ch 1.2 S GS c Diode forward voltage V V SD I =-1.7A,V=0V P-Ch -1.2 S GS Dynamic N-Ch 9.5 c Total gate charge Q g P-Ch 9.5 N-Channel VDS =15V,VGS =4.5V,ID =6A N-Ch 1.5 d Gate-source charge Q nC gs P-Channel P-Ch 2 VDS =-15V,VGS =-4.5V,ID =-6A N-Ch 3 d Q Gate-drain charge gd P-Ch 3 N-Ch 3.3 c Turn-on delay time td (on) P-Ch 7 N-Channel N-Ch 4.8 V =15V,R =2.2, DS L d Rise time tr V =10V,R =3 P-Ch 3 GS G ns P-Channel N-Ch 26 d td(off) Turn-off delay time V =-15V,R =2.7, DS L P-Ch 20 V =-10V,R =3 GS G N-Ch 4 d Fall time tf P-Ch 12 N-Ch 633 d Input Capacitance C iss 850 P-Ch N-Channel VDS =15V,VGS =0V,f =1MHz N-Ch 65 d Output Capacitance C pF oss P-Channel P-Ch 101 VDS =-15V,VGS =0V,f =1MHz N-Ch 55 d Reverse Transfer Capacitance C rss P-Ch 65 Notes : c. Pulse Test : Pulse width300s, duty cycle 2%. d. Guaranteed by design, not subject to production testing. 2 Rev. - 1.0 www.jscj-elec.com 026)(7 (/(&75,& / &+ 5 &7(5,67,&6