JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS CJQ6601 P-channel and N-channel Complementary MOSFETS SOP8 DESCRIPTIONS The Device uses advanced trench technology to provide excellent R and low gate charge. The complementary MOSFETs form a DS(ON) high-speed power inverter, suitable for a multitude of applications. FEATURES Including a N-ch CJ3400 MOS and a P-ch Surface mount package CJ3401 MOS (independently) in a package Low R DS(on) APPLICATIONS Suitable for a multitude of applications. High-speed power inverter MARKING: EQUIVALENT CIRCUIT Q6601= Device code D1 D1 D2 D2 8 7 5 6 Solid dot=Pin1 indicator Solid dot = Green molding compound device, 1 2 3 4 if none, the normal device S1 G1 S2 G2 Front side YY=Date Code MAXIMUM RATINGS (T =25 unless otherwise noted) a Value Symbol Parameter Unit N-ch MOS P-ch MOS V Drain-Source Voltage 30 -30 V DS V Gate-Source Voltage 12 12 V GS I Drain Current -Continuous(Note1) 5.8 -4.2 A D IDM Drain Current - Pulse(Note3) 23.2 -16.8 A Power Dissipation, Temperature and Thermal Resistance P Power Dissipation 1.4 W D R Thermal Resistance from Junction to Ambient 89 /W JA T Junction Temperature 150 j Storage Temperature -55~+150 T stg Lead Temperature 260 T L Rev. - 1.0 www.jscj-elec.com 1N-channel MOSFET ELECTRICAL CHARACTERISTICS (T =25 unless otherwise specified) a Parameter Symbol Test conditions Min Typ Max Unit STATIC PARAMETERS Drain-source breakdown voltage V (BR)DSS VGS =0V, ID=250A 30 V Zero gate voltage drain current IDSS VDS =24V,VGS = 0V 1 A Gate-body leakage current IGSS VGS =12V, VDS = 0V 100 nA Gate threshold voltage (note 1) VGS(th) VDS =V , ID =250A 0.7 1.4 V GS VGS =10V, ID =5.8A 19 35 m Drain-source on-resistance(note 1) RDS(on) VGS =4.5V, ID =5A 40 m 21 VGS =2.5V, ID =4A 52 m 26 Forward transconductance(note 1) gFS VDS =5V, ID =5A 8 S Diode forward voltage(note 1) V I =1A, VGS = 0V 1 V SD S DYNAMIC PARAMETERS (note 2) Input Capacitance C 1050 pF iss Output Capacitance C VDS =15V,VGS =0V,f =1MHz 99 pF oss Reverse Transfer Capacitance C 77 pF rss SWITCHING PARAMETERS (note 2) Turn-on delay time t 5 ns d(on) Turn-on rise time t V =10V,V =15V, 7 ns r GS DS Turn-off delay time t R =2.7,R =3, ID=0.5A 40 ns d(off) L GEN Turn-off fall time t 6 ns f P-channel MOSFET ELECTRICAL CHARACTERISTICS (T =25 unless otherwise specified) a STATIC PARAMETERS Drain-source breakdown voltage V (BR)DSS VGS =0V, ID=-250A -30 V Zero gate voltage drain current IDSS VDS =-24V,VGS = 0V -1 A Gate-body leakage current IGSS VGS =12V, VDS = 0V 100 nA Gate threshold voltage (note 1) VGS(th) VDS =V , ID =-250A -0.7 -1.3 V GS VGS =-10V, ID =-4.2A 65 m Drain-source on-resistance (note 1) RDS(on) VGS =-4.5V, ID =-4A 75 m VGS =-2.5V, ID =-1A 90 m Forward transconductance (note 1) g VDS =-5V, ID =-5A 7 S FS Diode forward voltage(note 1) V I =-1A, VGS = 0V -1 V SD S DYNAMIC PARAMETERS (note 2) Input Capacitance C 954 pF iss VDS =-15V,VGS =0V,f =1MHz Output Capacitance Coss 115 pF Reverse Transfer Capacitance C 77 pF rss SWITCHING PARAMETERS (note 2) Turn-on delay time t 6.3 ns d(on) Turn-on rise time t V =-10V,V =-15V, 3.2 ns r GS DS R =3.6,R =6, ID=0.5A Turn-off delay time t L GEN 38.2 ns d(off) Turn-off fall time t 12 ns f Note: 1 Pulse test: pulse width =300s, duty cycle 2% 2 These parameters have no way to verify. Rev. - 1.0 www.jscj-elec.com 2