JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD CJQ9926 Dual N-Channel MOSFET SOP8 I V R MAX D (BR)DSS DS(on) 40m 2.5V 20V 4.8A 30m 4.5V FEATURE z Advanced trench process technology z High density cell design for ultra low on-resistance z High power and current handing capability z Ideal for Liion battery pack applications MARKING Equivalent Circuit Q9926= Device code YY=Date Code Solid dot = Pin1 indicator Solid dot = Green molding compound device, if none,the normal device. Maximum ratings (T =25 unless otherwise noted) a Symbol Parameter Value Unit Drain-Source voltage V 20 V DS Gate-Source Voltage V 12 V GS Continuous Drain Current * I 4.8 A D Pulsed Drain Current I 30 A DM Power Dissipation * P 1.25 W D Thermal Resistance from Junction to Ambient * R 100 / W JA Junction Temperature T 150 J Storage Temperature T -55~+150 stg * Surface Mounted on 1 x 1 FR4 Board. www.jscj-elec.com 1 Rev. - 1.0T =25 unless otherwise specified a Parameter Symbol Test Condition Min Typ Max Unit STATIC CHARACTERISTICS Drain-source breakdown voltage V (BR)DSS VGS = 0V, ID =250A 20 V Zero gate voltage drain current IDSS VDS =20V,VGS = 0V 1 A Gate-body leakage current IGSS VGS =12V, VDS = 0V 100 nA Gate threshold voltage (note 1) VGS(th) VDS =V , ID =250A 0.6 1.0 1.2 V GS VGS =2.5V, ID =5A 28 40 m Drain-source on-resistance (note 1) RDS(on) VGS =4.5V, ID =6A 20 30 m Forward transconductance (note 1) gFS VDS =15V, ID =6A 15 S DYNAMIC CHARACTERISTICS (note 2) Input Capacitance C 640 pF lss V =10V,V =0V, DS GS Output Capacitance C 140 pF oss I =1.0MHz Reverse Transfer Capacitance C 80 pF rss SWITCHING CHARACTERISTICS (note 2) Turn-on delay time td(on) 35 ns Turn-on rise time tr 60 ns V =4.5V,V =15V, GEN DD R =6, ID =1A, R =15 Turn-off delay time td(off) GEN L 75 ns Turn-off fall time tf 30 ns Total gate charge Q 20 nC g Gate-source Charge Q VDS =15V,VGS =4.5V,ID =6A 3 nC gs nC Gate-drain Charge Q 3.3 gd SOURCE-DRAIN DIODE CHARACTERISTICS Maximum diode forward current IS 1 A Diode forward voltage (note 1) V I =1.7A,V =0V 1.2 V SD S GS Source-Drain Reverse Recovery Time t I = 1.7 A, di/dt = 100 A/s 80 ns rr F Notes : 1. Pulse Test : Pulse Width300s, Duty Cycle2%. 2. Guaranteed by design, not subject to production www.jscj-elec.com 2 Rev. - 1.0 026)(7 (/(&75,& / &+ 5 &7(5,67,&6