JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TSSOP8 Plastic-Encapsulate MOSFETS CJS2013 Dual N-Channel MOSFET TSSOP8 I V R TYP D (BR)DSS DS(on) m 4.5 V 10.5 11.4 m 3.8 V 20 6 V A 12.3 m 3.1 V 13.5 m 2.5V FEATURE APPLICATION z TenchFETr Power MOSFET z Battery Protection z Excellent R z Load Switch DS(on) z Low Gate Charge z Power Management z High Power and Current Handing Capability z Surface Mount Package MARKING Equivalent Circuit LOT No. ABSOLUTE MAXIMUM RATINGS (T =25 unless otherwise noted) a Parameter Symbol Value Unit Drain-Source Voltage V 20 V DS Gate-Source Voltage V 10 V GS Continuous Drain Current I 6 A D Pulsed Drain Current (note 1) I 25 A DM Thermal Resistance from Junction to Ambient (note 2) R 62.5 JA /W Junction Temperature T 150 J Storage Temperature T -55~ +150 STG Lead Temperature for Soldering Purposes(1/8 from case for 10 s) T 260 L 1 www.jscj-elec.com Rev. - 1.0 T =25 unless otherwise specified a Parameter Symbol Test Condition Min Typ Max Unit STATIC CHARACTERICTISCS Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250A 20 V Zero gate voltage drain current IDSS VDS =18V,VGS = 0V 1 A Gate-body leakage current IGSS VGS =10V, VDS = 0V 100 nA Gate threshold voltage (note 3) VGS(th) VDS =V , ID =250A 0.5 0.7 1.0 V GS VGS =4.5V, ID =3A 9.0 10.5 13.5 m VGS =3.8V, ID =3A 9.5 11.4 m 14.0 Drain-source on-resistance (note 3) RDS(on) m VGS =3.1V, ID =3A 10.5 12.3 15.0 VGS =2.5V, ID =3A 12.0 13.5 16.5 m Forward tranconductance (note 3) gFS VDS =5V, ID =4.5A 10 S Diode forward voltage (note 3) V I =1.25A, VGS = 0V 1.2 V SD S DYNAMIC CHARACTERICTISCS (note4) Input Capacitance C 935 pF iss Output Capacitance C VDS =8V,VGS =0V,f =1MHz 170 pF oss Reverse Transfer Capacitance C 145 pF rss SWITCHING CHARACTERICTISCS (note 4) Turn-on delay time td(on) 16 ns Turn-on rise time tr 8 ns V =10V,V =4V, DD GS I =1A,R =10 Turn-off delay time td(off) D GEN 48 ns Turn-off fall time tf 14 ns Total Gate Charge Q 16 nC g nC Gate-Source Charge Q VDS =10V,VGS =4.5V,ID=4A 1.3 gs Gate-Drain Charge Q 1.8 nC gd Notes : 1.Repetitive ratingPluse width limited by maximum junction temperature 2.Surface mounted on FR4 board using 1 square inch pad size,1oz single-side copper. 3. Pulse test : Pulse width300s, duty cycle2%. 4. Guaranteed by design, not subject to production. 2 www.jscj-elec.com Rev. - 1.0 026)(7 (/(&75,& / &+ 5 &7(5,67,&6