JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TSSOP8 Plastic-Encapsulate MOSFETS CJS8810 Dual N-Channel MOSFET TSSOP8 I V R TYP D (BR)DSS DS(on) 14.2 m 4.5V 15.4 m 3.8V 20V 7 A 2 .5V 18.2 m 26 m 1.8V DESCRIPTION The CJS8810 uses advanced trench technology to provide excellent R and low gate charge. It is ESD protected. This device is suitable DS(ON) for use as a uni-directional or bi-directional load switch,facilitated by its common-drain configuration. Equivalent Circuit MARKING: S8810 LOT No. MAXIMUM RATINGS (T =25 unless otherwise noted) a Parameter Symbol Value Unit Drain-Source Voltage V 20 V DS Gate-Source Voltage V 12 V GS Continuous Drain Current I 7 A D Pulsed Drain Current I * 30 A DM Thermal Resistance from Junction to Ambient R /W JA 62.5 Junction Temperature T 150 j Storage Temperature T -55~+150 stg Lead Temperature for Soldering Purposes(1/8 from case for 10 s) T 260 L *Repetitive ratingPluse width limited by junction temperature. 1 www.jscj-elec.com Rev. - 1.0MOSFET ELECTRICAL CHARACTERISTICS T =25 unless otherwise specified a Parameter Symbol Test Condition Min Typ Max Unit STATIC PARAMETERS Drain-source breakdown voltage V (BR) DSS VGS = 0V, ID =250A 20 V Zero gate voltage drain current IDSS VDS =16V,VGS = 0V 1 A VGS =4.5V, VDS = 0V 1 A Gate-body leakage current IGSS VGS =8V, VDS = 0V 10 A Gate threshold voltage (note 1) VGS(th) VDS =V , ID =250A 0.4 1 V GS VGS =10V, ID =3A 17 m 14 VGS =4.5V, ID =3A 14.2 19 m Drain-source on-resistance (note 1) RDS(on) VGS =3.8V, ID =3A 15.4 21 m VGS =2.5V, ID =3A 18.2 23 m VGS =1.8V, ID =3A 26 32 m Forward tranconductance (note 1) gFS VDS =5V, ID =7A 9 S Diode forward voltage(note 1) V I =1A, VGS = 0V 1 V SD S DYNAMIC PARAMETERS (note 2) Input Capacitance C 1150 pF iss Output Capacitance C VDS =10V,VGS =0V,f =1MHz 185 pF oss Reverse Transfer Capacitance C 145 pF rss Total gate charge Q 15 nC g Gate-source charge Q VDS =10V,VGS =4.5V,ID =7A 0.8 nC gs Gate-drain charge Q 3.2 nC gd SWITCHING PARAMETERS(note 2) Turn-on delay time td(on) 6 ns Turn-on rise time tr 13 ns V =5V,V =10V, GS DD R =1.35,R =3 Turn-off delay time td(off) L GEN 52 ns Turn-off fall time tf 16 ns Notes : 1. Pulse Test : Pulse width300s, duty cycle0.5%. 2. Guaranteed by design, not subject to production testing. 2 www.jscj-elec.com Rev. - 1.0