JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TSSOP8 Plastic-Encapsulate MOSFETS CJS8820 Dual N-Channel MOSFET TSSOP8 I V R TYP D (BR)DSS DS(on) 10 14 m V 16m 4.5V 20V 7 A m 3.8V 18 2 .5V 22 m DESCRIPTION The CJS8820 uses advanced trench technology to provide excellent R and low gate charge. It is ESD protected. This device is suitable DS(ON) for use as a uni-directional or bi-deirctional load switch,facilitated by its common-drain configuration. Equivalent Circuit MARKING: LOT No. MAXIMUM RATINGS (T =25 unless otherwise noted) a Parameter Symbol Value Unit Drain-Source Voltage V 20 V DS Gate-Source Voltage V 12 V GS Continuous Drain Current I 7 A D Pulsed Drain Current 30 A I * DM Thermal Resistance from Junction to Ambient R 125 /W JA Junction Temperature T 150 j Storage Temperature T -55~+150 stg Lead Temperature for Soldering Purposes(1/8 from case for 10 s) T 260 L *Repetitive ratingPluse width limited by junction temperature 1 www.jscj-elec.com Rev. - 1.1MOSFET ELECTRICAL CHARACTERISTICS T =25 unless otherwise specified a Parameter Symbol Test Condition Min Typ Max Unit STATIC PARAMETERS Drain-source breakdown voltage V (BR) DSS VGS = 0V, ID =250A 20 V Zero gate voltage drain current IDSS VDS =16V,VGS = 0V 1 A Gate-body leakage current IGSS VGS =10V, VDS = 0V 10 A Gate threshold voltage (note 1) VGS(th) VDS =V , ID =250A 0.5 1.1 V GS VGS =10V, ID =7A 8 14 21 m VGS =4.5V, ID =6.6A 10 16 24 m Drain-source on-resistance (note 1) RDS(on) VGS =3.8V, ID =6A 12 18 28 m VGS =2.5V, ID =5.5A 16 22 32 m 9 Forward tranconductance (note 1) gFS VDS =5V, ID =7A S 1 Diode forward voltage(note 1) V I =1A, VGS = 0V V SD S DYNAMIC PARAMETERS (note 2) Input Capacitance C 650 pF iss Output Capacitance C VDS =10V,VGS =0V,f =1MHz 140 pF oss Reverse Transfer Capacitance C 60 pF rss nC Total gate charge Q 8 g nC Gate-source charge Q VDS =10V,VGS =4.5V,ID =6A 2.5 gs nC Gate-drain charge Q 3 gd SWITCHING PARAMETERS(note 2) Turn-on delay time td(on) 0.5 ns Turn-on rise time tr 1 ns V =5V,V =10V, GS DD R =1.5,R =3 Turn-off delay time td(off) L GEN 12 ns Turn-off fall time tf 4 ns Notes : 1. Pulse Test : Pulse width300s, duty cycle0.5%. 2. Guaranteed by design, not subject to production testing. 2 Rev. - 1.1 www.jscj-elec.com