JIANGSU CHANGJIJIANGSU CHANGJING ELEANG ELECTRONICS TECHNOLOGYCTRONICS TECHNOLOGY CO., L CO., LTD TD SOT-323 Plastic-Encapsulate MOSFETS CJW1012 N-Channel Power MOSFET I V R MAX D (BR)DSS DS(on) SOT-323 700m 4.5 V 2 0 V 3 500 mA 850m 2.5V 1. GATE 2. SOURCE GENERRAL DESCRIPTION 1 3. DRAIN 2 This Single N-Channel MOSFET has been designed using advanced Power Trench process to optimize the R DS(ON). APPLICATION FEATURE z Drivers:Relays, Solenoids, Lamps, Hammers, Displays, Memories z High-Side Switching z Battery Operated Systems z Low On-Resistance z Power Supply Converter Circuits z Low Threshold z Load/Power Switching Cell Phones, Pagers z Fast Switching Speed z ESD protected MARKING Equivalent Circuit Maximum ratings (T =25 unless otherwise noted) a Symbol Value Parameter Unit Drain-Source voltage V 20 DSS V Gate-Source Voltage V 12 GS Drain Current-Continuous I 500 D(DC) mA Drain Current -Pulsed(note1) I 1000 DM(pulse) 150 Power Dissipation (note 2 , T =25) a P mW D Maximum Power Dissipation (note 3 , T =25) 275 c Thermal Resistance from Junction to Ambient R 833 JA /W Thermal Resistance from Junction to Case R 455 JC Storage Temperature T 150 j Junction Temperature T -55 ~+150 stg Rev. - 1.0 www.jscj-elec.com 1MOSFET ELECTRICAL CHARACTERISTICS T =25 unless otherwise specified a Parameter Symbol Test Condition Min Typ Max Unit On/Off States Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID =250A 20 V Gate-Threshold Voltage VGS(th) VDS =V , ID =250A 0.45 1.2 GS Gate-Body Leakage Current I VDS =0V, VGS =4.5V 1 A GSS Zero Gate Voltage Drain Current I VDS =16V, VGS =0V 100 nA DSS VGS =4.5V, ID =600mA 700 250 Drain-Source On-State Resistance RDS(on) m VGS =2.5V, ID =500mA 850 325 Forward Transconductance g VDS =10V, ID =400mA 1 S FS Dynamic Characteristics Input Capacitance (note 4) C 100 iss Output Capacitance (note 4) C VDS =16V,VGS =0V,f =1MHz 16 pF oss Reverse Transfer Capacitance (note 4) C 12 rss Total Gate Charge Q 750 g VDS =10V,VGS =4.5V, Gate-Source Charge Q 75 nC gs ID =250mA Gate-Drain Charge Q 225 gd Switching Times (note 4) Turn-On Delay Time td 5 (on) V =10V, DD Rise Time tr 5 R =47, ID=200mA, nS L Turn-Off Delay Time td(off) 25 V =4.5V,R =10 GS G Fall Time tf 11 Drain-Source Diode Characteristics Drain-Source Diode Forward Voltage (note 5) V I =0.15A, VGS = 0V 1.2 V SD S Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. This test is performed with no heat sink at T =25. a 3. This test is performed with infinite heat sink at T =25. c 4.These parameters have no way to verify. 5. Pulse Test : Pulse Width300s, Duty Cycle0.5%. Rev. - 1.0 www.jscj-elec.com 2