JIANGSU CHANGJIJIANGSU CHANGJING ELEANG ELECTRONICS TECHNOLOGYCTRONICS TECHNOLOGY CO., L CO., LTD TD SOT-563 Plastic-Encapsulate MOSFETS CJX3134K Dual N-Channel MOSFET SOT-563 I V R MAX D (BR)DSS DS(on) 4.5 V 380m V 450m 2.5V 2 0 0.75 A 800m 1.8V FEATURE APPLICATION Surface Mount Package Load/Power Switching Interfacing Switching N-Channel Switch with Low R DS(on) Operated at Low Logic Level Gate Drive Battery Management for Ultra Small Portable Electronics Logic Level Shift Equivalent to Two CJ3134K. MARKING Equivalent Circuit D1D1 G2G2 S2S2 66 55 44 11 22 33 S1S1 G1G1 D2D2 ABSOLUTE MAXIMUM RATINGS (T =25 unless otherwise noted) a Parameter Symbol Value Unit Drain-source voltage V 20 V DS V 12 V Typical Gate-source voltage GS Continuous drain current (t 10s) I 0.75 A D Power dissipation(note1) P 0.15 W D Thermal resistance from junction to ambient R 833 /W JA Junction temperature T 150 J Storage temperature T -55~ +150 stg Rev. - 1.0 www.jscj-elec.com 1MOSFET ELECTRICAL CHARACTERISTICS T =25 unless otherwise specified a Parameter Symbol Test Condition Min Typ Max Unit STATIC PARAMETERS Drain-source breakdown voltage V (BR) DSS VGS = 0V, ID =250A 20 V Zero gate voltage drain current IDSS VDS =20V,VGS = 0V 1 A Gate-body leakage current IGSS VGS =10V, VDS = 0V 20 A Gate threshold voltage (note 2) VGS(th) VDS =V , ID =250A 0.35 0.54 1.1 V GS VGS =4.5V, ID =0.65A 270 380 m R Drain-source on-resistance (note 2) DS(on) VGS =2.5V, ID =0.55A 320 450 m VGS =1.8V, ID =0.45A 390 800 m Forward tranconductance (note 2) gFS VDS =10V, ID =0.8A 1.6 S 1.2 Diode forward voltage(note 2) V I =0.15A, VGS = 0V V SD S DYNAMIC PARAMETERS (note 3) 120 Input Capacitance C 79 pF iss 20 pF Output Capacitance C VDS =16V,VGS =0V,f =1MHz 13 oss Reverse Transfer Capacitance C 9 15 pF rss SWITCHING PARAMETERS(note 3) Turn-on delay time td(on) 6.7 ns Turn-on rise time tr V =4.5V,V =10V, 4.8 ns GS DS I =0.5A,R =10 Turn-off delay time td(off) D GEN 17.3 ns Turn-off fall time tf 7.4 ns Total Gate Charge Q 20 nC g Gate-Source Charge Q VDS =10V,VGS =4.5V,ID =7A 1 nC gs Gate-Drain Charge Q 4 nC gd Notes : 1. Repetitive rating : Pulse width limited by junction temperature. 2. Pulse Test : Pulse width 300s, duty cycle 0.5%. 3. Guaranteed by design, not subject to production testing. Rev. - 1.0 www.jscj-elec.com 2