JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 2N5551 TRANSISTOR (NPN) 1. EMITTER FEATURES 2. BASE z General Purpose Switching Application 3. COLLECTOR MAXIMUM RATINGS (T =25 unless otherwise noted) a Symbol Parameter Value Unit V Collector-Base Voltage 180 V CBO V Collector-Emitter Voltage 160 V CEO V Emitter-Base Voltage 6 V EBO I Collector Current 0.6 A C P Collector Power Dissipation 625 mW C R Thermal Resistance From Junction To Ambient 200 /W JA T Junction Temperature 150 j T Storage Temperature -55~+150 stg ELECTRICAL CHARACTERISTICS (T =25 unless otherwise specified) a Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V I =100A,I=0 180 V (BR)CBO C E * V I =1mA,I=0 160 V Collector-emitter breakdown voltage (BR)CEO C B Emitter-base breakdown voltage V I =10A,I=0 6 V (BR)EBO E C Collector cut-off current I V =120V,I=0 50 nA CBO CB E Emitter cut-off current I V =4V,I=0 50 nA EBO EB C h V =5V, I=1mA 80 FE(1) CE C DC current gain h V =5V, I=10mA 80 300 FE(2) CE C h V =5V, I=50mA 50 FE(3) CE C V I =10mA,I =1mA 0.15 V CE(sat) 1 C B Collector-emitter saturation voltage V I =50mA,I =5mA 0.2 V CE(sat)2 C B V I =10mA,I=1mA 1 V BE (sat) 1 C B Base-emitter saturation voltage I =50mA,I=5mA 1 V V C B BE (sat) 2 Collector output capacitance C V =10V,I =0, f=1MHz 6 pF ob CB E Emitter input capacitance C V =0.5V,I =0, f=1MHz 20 pF ib BE C Transition frequency f VCE=10V,IC=10mA, f=100MHz 100 300 MHz T *Pulse test: pulse width 300 s, duty cycle 2.0%. CLASSIFICATION OF h FE(2) RANK A B C RANGE 80-100 100-150 150-200 200-300 B,Jun,2012Typical Characteristics 2N5551 h I Static Characteristic FE C 18 500 90uA COMMON EMITTER COMMON V =5V T =100 EMITTER CE a 15 80uA T =25 a 70uA T =25 12 a 60uA 100 50uA 9 40uA 6 30uA I =20uA B 3 0 10 024 68 10 12 110 100 200 COLLECTOR-EMITTER VOLTAGE V (V) COLLECTOR CURRENT I (mA) CE C V I V I BEsat C CEsat C 1.0 0.3 =10 =10 0.8 0.1 T =25 a T =100 a 0.6 T =100 T =25 a a 0.4 0.2 0.01 0.1 1 10 100 110 100 200 200 COLLECTOR CURRENT I (mA) COLLECTOR CURRENT I (mA) C C V I C / C V / V BE C ob ib CB EB 100 200 COMMON EMITTER f=1MHz V =5V I =0 / I =0 CE 100 E C T =25 a C ib T =100 a T =25 10 a 10 C ob 1 1 0.2 0.4 0.6 0.8 1.0 0.1 1 10 20 BASE-EMITTER VOLTAGE V (V) REVERSE VOLTAGE V (V) BE I f P T C T C a 750 150 V =10V CE T =25 a 625 500 100 375 250 125 0 50 113 0 20 30 0 25 50 75 100 125 150 AMBIENT TEMPERATURE T ( ) COLLECTOR CURRENT I (mA) a C B,Jun,2012 BASE-EMITTER SATURATION VOLTAGE V (V) TRANSITION FREQUENCY f (MHz) COLLECTOR CURRENT I (mA) BEsat C COLLECTOR CURRENT I (mA) T C COLLECTOR-EMITTER SATURATION COLLECTOR POWER DISSIPATION CAPACITANCE C (pF) VOLTAGE V (V) CEsat DC CURRENT GAIN h FE P (mW) C