ECC9634EU Changjing Electronics Technology

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors D882 TRANSISTOR (NPN) SOT-89-3L 1. BASE FEATURES 2. COLLECTOR Power dissipation 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 40 V CBO V Collector-Emitter Voltage 30 V CEO V Emitter-Base Voltage 6 V EBO I Collector Current -Continuous 3 A C P Collector Power Dissipation 0.5 W C T Junction Temperature 150 J T Storage Temperature -55~150 stg ELECTRICAL CHARACTERISTICS(Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V I = 100A, I=0 40 V (BR)CBO C E Collector-emitter breakdown voltage V I = 10mA, I=0 30 V (BR)CEO C B Emitter-base breakdown voltage V I = 100A, I=0 6 V (BR)EBO E C Collector cut-off current I V = 40V, I=0 1 A CBO CB E Collector cut-off current I V = 30V, I=0 10 A CEO CE B Emitter cut-off current I V = 6V, I=0 1 A EBO EB C h V =2V, I = 1A 60 400 FE(1) CE C DC current gain h V =2V, I = 100mA 32 FE(2) CE C Collector-emitter saturation voltage V I = 2A, I = 0.2 A 0.5 V CE(sat) C B Base-emitter saturation voltage V I = 2A, I = 0.2 A 1.5 V BE(sat) C B V = 5V , Ic=0.1A CE Transition frequency f 50 MHz T f =10MHz CLASSIFICATION OF h FE(1) Rank R O Y GR 60-120 100-200 160-320 200-400 Range B,May,2012D882 Typical Characteristics h I Static Characteristic FE C 2.00 1000 COMMON EMITTER 10mA 9mA T =25 1.75 a 8mA 7mA T =100 a 1.50 6mA T =25 1.25 5mA a 4mA 1.00 100 0.75 3mA 2mA 0.50 0.25 COMMON EMITTER I =1mA B V = 2V CE 0.00 10 3000 01 2345 678 1 10 100 1000 COLLECTOR-EMITTER VOLTAGE V (V) COLLECTOR CURRENT I (mA) CE C V V I I CEsat BEsat C C 1000 2000 1000 T =25 a 100 T =100 a T =100 a 10 T =25 a =10 =10 1 100 1 10 100 1000 3000 1 10 100 1000 3000 COLLECTOR CURREMT I (mA) COLLECTOR CURREMT I (mA) C C C /C V /V I V ob ib CB EB C BE 3000 500 f=1MHz I =0/I =0 E C 1000 T =25 a C ib 100 100 C ob 10 COMMON EMITTER V = 2V CE 10 1 0.1 1 10 20 0 300 600 900 1200 REVERSE VOLTAGE V (V) BASE-EMMITER VOLTAGE V (mV) BE P T C a 600 500 400 300 200 100 B,May,2012 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE T ( ) a T =100 a T =25 a COLLECTOR-EMITTER SATURATION COLLECTOR POWER DISSIPATION VOLTAGE V (mV) COLLECTOR CURRENT I (mA) CEsat C COLLECTOR CURRENT I (A) P (mW) C C BASE-EMITTER SATURATION VOLTAGE V (mV) DC CURRENT GAIN h CAPACITANCE C (pF) BEsat FE