X-On Electronics has gained recognition as a prominent supplier of FMMT720 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. FMMT720 Bipolar Transistors - BJT are a product manufactured by Changjing Electronics Technology. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

FMMT720 Changjing Electronics Technology

FMMT720 electronic component of Changjing Electronics Technology
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See Product Specifications
Part No.FMMT720
Manufacturer: Changjing Electronics Technology
Category: Bipolar Transistors - BJT
Description: Transistors (NPN/PNP) PNP 1.5A 40V SOT-23 (SOT-23-3) RoHS
Datasheet: FMMT720 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10: USD 0.0575 ea
Line Total: USD 0.58 
Availability - 5682
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ: 10  Multiples: 10
Pack Size: 10
Availability Price Quantity
5682
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 10
Multiples : 10
10 : USD 0.0575
100 : USD 0.0474
300 : USD 0.0424
3000 : USD 0.0333
6000 : USD 0.0304
9000 : USD 0.0289

   
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Transistor Type
Current - Collector Ic Max
Voltage - Collector Emitter Breakdown Max
Power - Max
Collector Cut-Off Current Icbo
Collector-Emitter Breakdown Voltage Vceo
Power Dissipation Pd
Collector Current Ic
Dc Current Gain Hfe@Ic Vce
Transition Frequency Ft
Collector-Emitter Saturation Voltage Vcesat@Ic Ib
Operating Temperature
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We are delighted to provide the FMMT720 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FMMT720 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors JC ( T SOT23 FMMT720 TRANSISTOR (PNP) FEATURE z Switching transistor 1. BASE z Extremely low saturation voltage 2. EMITTER z Complementary NPN type: FMMT619 3. COLLECTOR APPLICATION z Gate Driving MOSFETs and IGBTs z DC-DC converters z Charging circuit z Power switches MARKING: 720 MAXIMUM RATINGS (T =25 unless otherwise noted) a Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IB Base Current -0.5 A IC* Collector Current -Continuous -1.5 A ICM Peak Pulse Current -4 A P Total Collector Dissipation 350 mW C R Thermal Resistance from Junction to Ambient 357 JA /W TJ Junction Temperature 150 Tstg Storage Temperature -55~+150 www.cj-elec.comwww.cj-elec.com 1 A,Jun,2014C,Jul,2015 ELECTRICAL CHARACTERISTICS (T =25 unless otherwise specified) a Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO -40 V IC=-100A, IE=0 Collector-emitter breakdown voltage V(BR)CEO* IC= -10mA, IB=0 -40 V Emitter-base breakdown voltage V(BR)EBO IE= -100A, IC=0 -5 V Collector cut-off current ICBO VCB=-35V, IE=0 -0.1 A Collector cut-off current ICES VCE=-35V,V =0 -0.1 BE A Emitter cut-off current IEBO VEB= -4V, IC=0 -0.1 A hFE(1) * VCE= -2V, IC=-10mA 300 hFE(2) * VCE=-2V, IC=-100mA 300 DC current gain hFE(3) * VCE=-2V, IC=-1A 180 hFE(4) * VCE=-2V, IC=-1.5A 60 hFE(5) * VCE=-2V, IC=-3A 12 VCE(sat) (1) *IC=-0.1A, IB=-10mA -40 mV Collector-emitter saturation voltage VCE(sat) (2) *IC=-1A, IB=-50mA -220 mV VCE(sat) (3) * IC=-1.5A, IB=-100mA -330 mV Base-emitter saturation voltage VBE(sat) * IC=-1.5A, IB= -75mA -1 V Base-emitter voltage VBE(on) * VCE=-2V, IC=-1.5A -1 V Transition frequency fT VCE=-10V,IC=-50mA, f=100MHZ 150 MHz Collector output capacitance C VCB=-10V,f=1MHZ 25 pF ob Turn-on Time t 40 ns (on) VCC=-15V, IC=-0.75A, IB1= IB2=-15mA Turn-off Time t 435 ns (off) *Measured under pulse conditions . Pulse width =300s. Duty cycle2%. www.cj-elec.comwww.cj-elec.com 2 C,Jul,2015A,Jun,2014

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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