JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT2907 TRANSISTOR (PNP) FEATURES z Epitaxial planar die construction 1. BASE z Complementary NPN Type available(MMBT2222) 2. EMITTER 3. COLLECTOR Marking: M2B MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit -60 V V Collector-Base Voltage CBO V Collector-Emitter Voltage -40 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current -Continuous -600 mA C P Total Device Dissipation 250 mW D Thermal Resistance Junction to Ambient 500 R /W JA T Junction Temperature 150 J T Storage Temperature -55 to +150 stg ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V I =-10A,I=0 -60 V (BR)CBO C E Collector-emitter breakdown voltage V I =-10mA,I=0 -40 V (BR)CEO* C B Emitter-base breakdown voltage V I =-10A,I=0 -5 V (BR)EBO E C Collector cut-off current I V =-50V,I=0 -20 nA CBO CB E Base cut-off current I V =-3V, I=0 -10 nA EBO CE C Collector cut-off current I V =-30 V, V =-0.5V -50 nA CEX CE BE(off) h V =-10V,I=-150mA 100 300 FE(1)* CE C DC current gain h V =-10V,I=-0.1mA 52 FE(2)* CE C h V =-10V,I=-500mA 32 FE(3) * CE C V I =-150mA,I=-15mA -0.4 V CE(sat)* C B Collector-emitter saturation voltage V I =-500mA,I=-50mA -0.67V CE(sat)* C B V I =-150mA,I=-15mA -1 V BE(sat)* C B Base-emitter saturation voltage V I =-500mA,I=-50mA -1.2 V BE(sat)* C B Transition frequency f V =-20V,I=-50mA,f=100MHz 200 MHz T CE C Delay time t 10 ns d V =-30V,I =-150mA, =-15mA CE C B1 Rise time t 25 ns r Storage time t 225 ns S V =-6V,I =-150mA, CE C I =- I =- 15mA B1 B2 Fall time t 60 ns f *Pulse test: t 300 s, 0.02. p B,Jan,2014MMBT2907 Typical Characteristics Static Charact eristic h I FE C -200 400 -900uA COMMON EMITTER -810uA COMMON V = -10V -720uA CE EMITTER T =25 T =100 -630uA a a -150 -540uA 300 -450uA -360uA -100 200 T =25 a -270uA -50 100 -180uA I =-90uA B -0 0 -0 -5 -10 -15 -20 -1 -10 -100 -600 COLLECTOR CURRENT I (mA) COLLECTOR-EMITTER VOLTAGE V (V) C CE V V I I CEsat BEsat C C -1000 -1200 -900 T =25 a T =100 a -100 -600 T =100 a T =25 a =10 =10 -10 -300 -600 -1 -10 -100 -1 -10 -100 -600 COLLECTOR CURREMT I (mA) COLLECTOR CURREMT I (mA) C C C /C V /V I V ob ib CB EB C BE 100 -600 f=1MHz I =0/I =0 E C T =25 a -100 C ib -10 10 C ob -1 COMMON EMITTER V = -10V CE 1 -0.1 -0.1 -1 -10 -20 -0 -300 -600 -900 -1200 REVERSE VOLTAGE V (V) BASE-EMMITER VOLTAGE V (mV) BE P T f I C a T C 500 300 250 400 200 150 100 300 50 V =-20V CE o T =25 C a 0 200 -0 -10 -20 -30 -40 -50 -60 0 25 50 75 100 125 150 COLLECTOR CURRENT I (mA) AMBIENT TEMPERATURE T ( ) a C B,Jan,2014 T =100 a T =25 a COLLECTOR-EMITTER SATURATION COLLECTOR CURRENT I (mA) C VOLTAGE V (mV) COLLECTOR CURRENT I (mA) TRANSITION FREQUENCY f (MHz) CEsat C T BASE-EMITTER SATURATION COLLECTOR POWER DISSIPATION VOLTAGE V (mV) DC CURRENT GAIN h CAPACITANCE C (pF) BEsat FE P (mW) C