JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors C J ( T MMBTA55 TRANSISTOR (PNP) SOT 23 FEATURES Driver Transistors MARKING:2H 1. BASE 2. EMITTER MAXIMUM RATINGS (T =25 unless otherwise noted) a 3. COLLECTOR Symbol Parameter Value Unit V Collector-Base Voltage -60 V CBO V Collector-Emitter Voltage -60 V CEO V Emitter-Base Voltage -4 V EBO I Collector Current -500 mA C P Collector Power Dissipation 225 mW C R Thermal Resistance From Junction To Ambient 556 /W JA T Junction Temperature 150 j T Storage Temperature -55+150 stg ELECTRICAL CHARACTERISTICS (T =25 unless otherwise specified) a Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V I =-100A, I =0 -60 V (BR)CBO C E Collector-emitter breakdown voltage V I =-1mA, I =0 -60 V (BR)CEO C B Emitter-base breakdown voltage V I =-100A, I =0 -4 V (BR)EBO E C Collector cut-off current I V =-60V, I =0 -0.1 A CBO CB E Collector cut-off current I V =-60V, I =0 -0.1 A CEO CE B h V =-1V, I =-10mA 100 400 FE(1) CE C DC current gain h V =-1V, I =-100mA 100 FE(2) CE C V I =-100mA, I =-10mA -0.25 V Collector-emitter saturation voltage CE(sat) C B V V =-1V, I =-100mA -1.2 V Base-emitter voltage BE CE C Transition frequency f V =-1V,I =-100mA, f=100MHz 50 MHz T CE C www.cj-elec.comwww.cj-elec.com 1 A,Jun,2014B,Oct,2014SOT-23 Package Outline Dimensions Dimensions In Millimeters Dimensions In Inches Symbol Min Max Min Max A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 e 0.950 TYP 0.037 TYP e1 1.800 2.000 0.071 0.079 L 0.550 REF 0.022 REF L1 0.300 0.500 0.012 0.020 0 8 0 8 SOT-23 Suggested Pad Layout www.cj-elec.comwww.cj-elec.com 2 B,Oct,2014A,Jun,2014