JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors MMDT2227 TRANSISTOR (NPN+PNP) SOT-363 FEATURE C1 B2 z Epitaxial planar die construction E2 z One 2222A NPN One 2907A PNP z Ideal for power amplification and switching E1 B1 MARKING: K27 C2 NPN 2222A MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol alue Units Parameter V V Collector-Base Voltage 75 V CBO V Collector-Emitter Voltage 40 V CEO Emitter-Base Voltage 6 V V EBO I Collector Current -Continuous 600 mA C P Collector Power Dissipation 200 mW C T Junction Temperature 150 J T Storage Temperature -55-150 stg ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Max Unit Collector-base breakdown voltage V I = 10A, I=0 75 V (BR)CBO C E Collector-emitter breakdown voltage V I = 10mA, I=0 40 V (BR)CEO C B Emitter-base breakdown voltage V I =10A.I=0 6 V (BR)EBO E C V = 60V, I=0 10 nA Collector cut-off current I CBO CB E Collector cut-off current I V = 60V,V=3V 10 nA CEX CE EB( off) Emitter cut-off current I V = 3 V, I=0 10 nA EBO EB C * h V =10V, I = 0.1mA 35 FE(1) CE C * h V =10V, I = 1mA 50 FE(2) CE C * h V =10V, I = 10mA 75 FE(3) CE C DC current gain * h V =10V, I = 150mA 100 300 FE(4) CE C * h V =10V, I = 500mA 40 FE(5) CE C * h V =1V, I = 150mA 35 FE(6) CE C * V I =150mA, I = 15mA 0.3 V CE(sat)1 C B Collector-emitter saturation voltage * I =500mA, I = 50mA 1 V V CE(sat)2 C B * V I =150mA, I=15mA 0.6 1.2 V BE(sat)1 C B Base-emitter saturation voltage * V I =500mA, I = 50mA 2 V BE(sat)2 C B V =20V, I = 20mA, CE C Transition frequency f 300 MHz T f=100MHz Output Capacitance C V =10V, I=0,f=1MHz 8 pF ob CB E Input Capacitance C V =0.5V,I = 0,f=1MHz 25 pF ib EB C V =10V, I =100A, CE C NF 4 dB Noise Figure f=1KHz,Rs=1K pulse test A,Dec,2010 Switching characteristics Parameter Symbol Test c onditions Min Max Unit Delay time t 10 nS d Rise time t 25 nS r V =30V, I =150mA, CC C V =0.5V,I =15mA Storage time t BE(off) B1 225 nS S Fall time t 60 nS f PNP 2907A MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol alueUnits Parameter V V -60 V Collector-Base Voltage CBO V Collector-Emitter Voltage -60 V CEO V -5 V Emitter-Base Voltage EBO I Collector Current -Continuous -600 mA C P Collector Power Dissipation 200 mW C T Junction Temperature 150 J T Storage Temperature -55-150 stg ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions M in M ax U nit Collector-base breakdown voltage V I = -10A, I =0 -60 V (BR)CBO C E Collector-emitter breakdown voltage V I = -10mA, I=0 -60 V (BR)CEO C B Emitter-base breakdown voltage V -5 V (BR)EBO I =-10A, I =0 E C Collector cut-off current I V =-50V, I=0 -10 nA CBO CB E Collector cut-off current I V =-30V,V=-0.5V -50 nA CEX CE EB( off) Emitter cut-off current I V =-3V, I=0 -10 nA EBO EB C * h V =-10V, I = -0.1mA 75 FE(1) CE C * h V =-10V, I = -1mA 100 FE(2) CE C * DC current gain h V =-10V, I=-10mA 100 FE(3) CE C * h V =-10V, I = -150mA 100 300 FE(4) CE C * h V =-10V, I=-500mA 50 FE(5) CE C * V ( I =-150mA, I=-15mA -0.4 V CE sat)1 C B Collector-emitter saturation voltage * V I =-500mA, I =- 50mA -1.6 V CE(sat)2 C B * V I =-150mA, I=-15mA -1.3 V BE(sat)1 C B Base-emitter saturation voltage * V I =-500mA, I = -50mA -2.6 V BE(sat)2 C B Transition frequency 200 MHz f V =-20V, I = -50mA,f=100MHz T CE C Output Capacitance 8 pF C V =-10V, I = 0,f=1MHz ob CB E 30 pF Input Capacitance C V =-2V, I = 0,f=1MHz EB C ib 10 nS Delay time t d Rise time t 40 nS r V =-30V,I =-150mA, I =-15mA CC C B1 Storage time t 225 nS s Fall time t 60 nS f *pulse test A,Dec,2010