JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 MPS2222A TRANSISTOR (NPN ) 1. EMITTER FEATURE Complementary NPN Type available (MPS2907A) 2. BASE 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V 75 V CBO Collector-Base Voltage V Collector-Emitter Voltage 40 V CEO V 6 V EBO Emitter-Base Voltage I Collector Current -Continuous 600 mA C P Collector Power Dissipation 625 mW C T Junction Temperature 150 J T Storage Temperature -55-150 stg ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Max Unit Collector-base breakdown voltage V I = 10uA , I=0 75 V (BR)CBO C E Collector-emitter breakdown voltage V I = 10mA , I=0 40 V (BR)CEO C B Emitter-base breakdown voltage V I = 10uA, I=0 6 V (BR)EBO E C Collector cut-off current I V = 60V, I=0 10 nA CBO CB E Collector cut-off current I V = 60V,V=3V 10 nA CEX CE EB(Off) Emitter cut-off current I V = 3 V, I=0 100 nA EBO EB C h V =10V,I = 150mA 100 300 FE(1) CE C DC current gain h V =10V,I = 0.1mA 40 FE(2) CE C * h V =10V, I = 500mA 42 FE(3) CE C * V I = 500mA, I=50mA 0.6 V CE(sat)(1) C B Collector-emitter saturation voltage * V I = 150mA, I=15mA 0.3 V CE(sat)(2) C B * Base-emitter saturation voltage V I = 500mA, I = 50mA 1.2 V BE(sat) C B V =30V, V =-0.5V, 10 Delay time t CC EB(Off) nS d I =150mA,I =15mA Rise time t C B1 25 nS r 225 Storage time t nS S V =30V,Ic=150mA,I =I =15mA CC B1 B2 Fall time t 60 nS f Transition frequency V =20V, I =20mA, f=100MHz 300 MHz f CE C T * pulse test CLASSIFICATION OF h FE(1) Rank L H Range 100-200 200-300 B,May,2012Typical Characterisitics MPS2222A Static Charact eristic h I FE C 200 1000 COMMON EMITTER COMMON EMITTER V =10V 1mA T =25 CE a 900uA 160 T =100 a 800uA 700uA T =25 a 120 600uA 100 500uA 80 400uA 300uA 40 200uA I =100uA B 0 10 0 1020 3040 50 0.1 1 10 100 600 COLLECTOR-EMITTER VOLTAGE V (V) COLLECTOR CURRENT I (mA) CE C V I V I CEsat C BEsat C 0.5 1.2 =10 0.4 T =25 0.8 a 0.3 T =100 a 0.2 T =100 0.4 a 0.1 T =25 a =10 0.0 0.0 110 100 110 100 600 600 COLLECTOR CURRENT I (mA) COLLECTOR CURRENT I (mA) C C I I V f C C BE T 300 600 COMMON EMITTER V =10V CE 250 100 T =100 a 200 10 150 T =25 a 100 1 COMMON EMITTER 50 V =20V CE T =25 a 0.1 0 0.0 0.2 0.4 0.6 0.8 1.0 110 70 30 BASE-EMMITER VOLTAGE V (V) COLLECTOR CURRENT I (mA) BE C V / V C / C CB EB P T ob ib C a 100 750 f=1MHz I =0/I =0 E C T =25 625 a C ib 500 10 375 C ob 250 125 1 0 0.1 1 10 20 0 25 50 75 100 125 150 REVERSE VOLTAGE V (V) AMBIENT TEMPERATURE T ( ) a B,May,2012 COLLECTOR-EMITTER SATURATION VOLTAGE V (V) COLLECTOR CURRENT I (mA) COLLECTOR CURRENT I (mA) CAPACITANCE C (pF) CEsat C C COLLECTOR POWER DISSIPATION BASE-EMITTER SATURATION P (mW) C VOLTAGE V (V) DC CURRENT GAIN h TRANSITION FREQUENCY f (MHz) BEsat FE T