JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors JC ( T S9013 TRANSISTOR (NPN) SOT23 FEATURES z High Collector Current. z Complementary to S9012. z Excellent h Linearity. FE 1. BASE MARKING: J3 2. EMITTER 3. COLLECTOR =25 unless otherwise noted) MAXIMUM RATINGS (T a Symbol Parameter Value Unit V Collector-Base Voltage 40 V CBO V Collector-Emitter Voltage 25 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current 500 mA C P Collector Power Dissipation 300 mW C R Thermal Resistance From Junction To Ambient 416 /W JA T Junction Temperature 150 j T Storage Temperature -55+150 stg ELECTRICAL CHARACTERISTICS (T =25 unless otherwise specified) a Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V I =0.1mA, I0 40 (BR)CBO C E V Collector-emitter breakdown voltage V I =1mA, I0 25 V (BR)CEO C B V I =0.1mA, I=0 5 V Emitter-base breakdown voltage (BR)EBO E C Collector cut-off current I V =40V, I0 0.1 uA CBO CB E Collector cut-off current I V =20V, I0 0.1 uA CEO CE B Emitter cut-off current I V =5V, I0 0.1 uA EBO EB C h V =1V, I50mA 120 400 FE(1) CE C DC current gain h V =1V, I500mA 40 FE(2) CE C Collector-emitter saturation voltage V I =500mA, I=50mA 0.6 V CE(sat) C B Base-emitter saturation voltage V I =500mA, I=50mA 1.2 V BE(sat) C B Base-emitter voltage V V =1V,I =10mA, 0.7 V BE CB C Transition frequency f V =6V,I =20mA, f=30MHz 150 MHz T CE C C V =6V, I =0, f=1MHz 8 pF Collector output capacitance ob CB E CLASSIFICATION OF h FE(1) RANK L H J RANGE 120-200 200-350 300-400 www.cj-elec.comwww.cj-elec.com 1 C,Oct,2014A,Jun,2014 = = = = = = =Typical Characteristics h I Static Characteristic FE C 100 1000 COMMON EMITTER COMMON V =1V 400uA EMITTER CE T =25 a 80 350uA T =100 a 300uA T =25 a 60 250uA 100 200uA 40 150uA 100uA 20 I =50uA B 0 10 1 3 10 30 100 500 04 8 12 16 20 COLLECTOR CURRENT I (mA) COLLECTOR-EMITTER VOLTAGE V (V) C CE V I V I BEsat C CEsat C 1.2 500 300 T =25 0.8 a 100 T =100 a T =100 a 0.4 T =25 30 a =10 =10 10 0.0 30 1 3 10 30 100 500 1 3 10 100 500 COLLECTOR CURRENT I (mA) COLLECTOR CURRENT I (mA) C C I V C / C V / V C BE ob ib CB EB 100 100 COMMON EMITTER f=1MHz V =1V I =0/ I =0 CE E C 30 T =25 a C ib 30 T =100 a 10 C 10 3 ob T =25 a 1 3 0.3 0.1 1 0.0 0.2 0.4 0.6 0.8 1.0 0.1 0.3 1 3 10 20 REVERSE VOLTAGE V (V) BASE-EMMITER VOLTAGE V (V) BE f I P T T C C a 1000 400 V =6V CE T =25 a 300 300 100 200 100 10 0 10 30 100 0 25 50 75 100 125 150 COLLECTOR CURRENT I (mA) AMBIENT TEMPERATURE T ( ) C a www.cj-elec.comwww.cj-elec.com 2 A,Jun,2014C,Oct,2014 COLLECTOR CURRENT I (mA) COLLECTOR-EMITTER SATURATION TRANSITION FREQUENCY f (MHz) C COLLECTOR CURRENT I (mA) T C VOLTAGE V (mV) CEsat BASE-EMITTER SATURATION COLLECTOR POWER DISSIPATION DC CURRENT GAIN h FE CAPACITANCE C (pF) VOLTAGE V (V) P (mW) BEsat C