JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors JC ( T SOT-23 SS8050 TRANSISTOR (NPN) 1. BASE FEATURES 2. EMITTER Complimentary to SS8550 3. COLLECTOR MARKING: Y1 MAXIMUM RATINGS (T =25 unless otherwise noted) a Symbol Parameter Value Unit V Collector-Base Voltage 40 V CBO V Collector-Emitter Voltage 25 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current 1.5 A C P Collector Power Dissipation 300 mW C R Thermal Resistance From Junction To Ambient 417 /W JA T Junction Temperature 150 j T Storage Temperature -55+150 stg ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit V I = 100A, I=0 40 V Collector-base breakdown voltage (BR)CBO C E Collector-emitter breakdown voltage V I = 0.1mA, I=0 25 V (BR)CEO C B V I =100A, I=0 5 V Emitter-base breakdown voltage (BR)EBO E C Collector cut-off current I V =40V, I=0 0.1 A CBO CB E I V =20V, I=0 0.1 A Collector cut-off current CEO CE E Emitter cut-off current I V = 5V, I=0 0.1 A EBO EB C h V =1V, I = 100mA 120 400 FE(1) CE C DC current gain h V =1V, I = 800mA 40 FE(2) CE C V I =800mA, I = 80mA 0.5 V Collector-emitter saturation voltage CE(sat) C B Base-emitter saturation voltage V I =800mA, I = 80mA 1.2 V BE(sat) C B V =10V, I = 50mA CE C Transition frequency f 100 MHz T f=30MHz CLASSIFICATION OF hFE (1) Rank L H J Range 120-200 200-350 300-400 www.cj-elec.comwww.cj-elec.com 1 D,Nov,2015A,Jun,2014Typical Characteristics h I Static Characteristic C FE 140 1000 COMMON EMITTER 500uA COMMON V =1V CE EMITTER 120 450uA T =100 T =25 a a 400uA 300 100 350uA T =25 a 80 300uA 100 250uA 60 200uA 40 150uA 30 100uA 20 I =50uA B 0 10 0.0 0.5 1.0 1.5 2.0 2.5 1 3 10 30 100 300 1000 1500 COLLECTOR CURRENT I (mA) COLLECTOR-EMITTER VOLTAGE V (V) C CE V I V I C BEsat C CEsat 1000 1.2 300 1.0 T =100 a 100 0.8 T =25 a T =25 30 a T =100 a 0.6 10 0.4 3 =10 =10 1 0.2 1 3 10 30 100 1000 1 3 10 30 100 300 1000 1500 300 1500 COLLECTOR CURRENT I (mA) COLLECTOR CURRENT I (mA) C C V / V V I C / C CB EB BE C ob ib 200 1500 1000 f=1MHz I =0/I =0 E C 100 T =25 C a ib 300 T =100 a 30 100 C ob 30 10 T =25 a 10 3 3 COMMON EMITTER V =1V CE 1 1 0.2 0.4 0.6 0.8 1.0 1.2 0.1 0.3 1 3 10 20 BASE-EMMITER VOLTAGE V (V) REVERSE VOLTAGE V (V) BE I f P T C T C a 1000 350 300 300 250 100 200 30 150 10 100 3 50 V =10V CE T =25 a 1 0 113 0 30100 0 25 50 75 100 125 150 COLLECTOR CURRENT I (mA) AMBIENT TEMPERATURE T ( ) C a www.cj-elec.comwww.cj-elec.com 2 D,Nov,2015A,Jun,2014 COLLECTOR-EMITTER SATURATION COLLCETOR CURRENT I (mA) COLLECTOR CURRENT I (mA) C TRANSITION FREQUENCY f (MHz) C T VOLTAGE V (mV) CEsat BASE-EMITTER SATURATION COLLECTOR POWER DISSIPATION CAPACITANCE C (pF) DC CURRENT GAIN h FE VOLTAGE V (V) P (mW) BEsat C