JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Transistors TO-220-3L TIP42/42A/42B/42C TRANSISTOR (PNP) 1. BASE FEATURES 2. COLLECTOR z Medium Power Linear Switching Applications z Complement to TIP41/41A/41B/41C 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter TIP42 TIP42A TIP42B TIP42C Unit V Collector-Base Voltage -40 -60 -80 -100 V CBO V Collector-Emitter Voltage -40 -60 -80 -100 V CEO Emitter-Base Voltage -5 V V EBO I Collector Current -Continuous -6 A C P Collector Power Dissipation 2 W C T Junction Temperature 150 J T Storage Temperature Range -55to+150 stg ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Max Unit Collector-base breakdown voltage TIP42 -40 TIP42A -60 V I = -1mA, I =0 V (BR)CBO C E TIP42B -80 TIP42C -100 Collector-emitter breakdown voltage TIP42 -40 TIP42A -60 * V I = -30mA, I =0 V (BR)CEO C B TIP42B -80 -100 TIP42C Emitter-base breakdown voltage V I = -1mA, I=0 -5 V (BR)EBO E C Collector cut-off current TIP42 V =-40V, I =0 CB E TIP42A V =-60V, I =0 CB E I -0.4 mA CBO V =-80V, I =0 TIP42B CB E V =-100V, I =0 CB E TIP42C V = -30V, I = 0 CE B Collector cut-off current TIP42/42A I -0.7 mA CEO TIP42B/42C V = -60V, I = 0 CE B Emitter cut-off current I V =-5V, I=0 -1 mA EBO EB C h V =-4V, I=-0.3A 30 FE(1) CE C DC current gain h V =-4 V, I = -3A 15 75 FE(2) CE C Collector-emitter saturation voltage V I =-6A, I=-0.6A -1.5 V CE(sat) C B Base-emitter voltage V V =-4V, I=-6A -2 V BE CE C V =-10V,I =-0.5 Transition frequency f CE C 3 MH T Z * Pulse test www.cj-elec.com 1 C,Nov,2014Typical Characteristics Typical Characteristics TIP42C Static Characteristic h I FE C -400 1000 COMMON COMMON EMITTER EMITTER V = -4V -350 CE T =25 a -4mA -300 -3.6mA -3.2mA -250 T =100 a -2.8mA -200 100 -2.4mA T =25 -2mA a -150 -1.6mA -100 -1.2mA -0.8mA -50 I =-0.4mA B -0 10 -0 -1 -2 -3 -4 -5 -6 -1 -10 -100 -1000 -3000 COLLECTOR CURRENT I (mA) COLLECTOR-EMITTER VOLTAGE V (V) C CE V I V I BEsat C CEsat C -1000 -1200 =10 =10 -1000 -800 T =25 a T =100 a -100 -600 T =25 T =100 a a -400 -200 -10 -0 -0.5 -1 -10 -100 -1000 -6000 -0.1 -1 -10 -100 -1000 -6000 COLLECTOR CURREMT I (mA) COLLECTOR CURREMT I (mA) C C I V C BE f I T C 20 -6000 COMMON EMITTER COMMON EMITTER V =-4V V =-10V CE CE -1000 T =25 16 a -100 12 -10 8 -1 4 -0.1 0 -0 -200 -400 -600 -800 -1000 -1200 -20 -600 -100 COLLECTOR CURRENT I (mA) BASE-EMMITER VO LTAGE V (mV) C BE P T C /C V /V C a ob ib CB EB 3 10000 f=1MHz I =0/I =0 E C T =25 a 2 1000 C ib C ob 1 100 0 10 0 25 50 75 100 125 150 -0.1 -1 -10 -30 AMBIENT TEMPERATURE T ( ) REVERSE VOLTAGE V (V) a www.cj-elec.com 2 C,Nov,2014 T =100 a T =25 a BASE-EMITTER SATURATION VOLTAGE V (mV) COLLECTOR CURRENT I (mA) BEsat C COLLECTOR CURRENT I (mA) CAPACITANCE C (pF) C COLLECTOR-EMITTER SATURATION COLLECTOR POWER DISSIPATION TRANSITION FREQUENCY f (MHz) VOLTAGE V (mV) DC CURRENT GAIN h T P (W) FE CEsat C