X-On Electronics has gained recognition as a prominent supplier of 2N3906-G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2N3906-G Bipolar Transistors - BJT are a product manufactured by Comchip. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2N3906-G Comchip

2N3906-G electronic component of Comchip
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See Product Specifications
Part No.2N3906-G
Manufacturer: Comchip
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT -40V -200mA TO-92
Datasheet: 2N3906-G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.297 ea
Line Total: USD 0.3 
Availability - 3490
Ship by Tue. 03 Dec to Thu. 05 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3490
Ship by Tue. 03 Dec to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 0.297
10 : USD 0.2431
100 : USD 0.0869
1000 : USD 0.0693
2000 : USD 0.0528
10000 : USD 0.0418
25000 : USD 0.0407
50000 : USD 0.0363

   
Manufacturer
Product Category
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

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General Purpose Transistor 2N3906-G (PNP) RoHS Device TO-92 Features -PNP silicon epitaxial planar transistor for 0.185(4.70) switching and amplifier application. 0.173(4.40) -As complementary type, the NPN transistor 0.135 (3.43) Min. 0.055 (1.14) 0.020(0.51) 0.043(1. 10) 2N3904-G is recommended. 0.014(0.36) 0.022(0.55) 0.015(0.38) -This transistor is available in the SOT-23 case with the type designation MMBT3906-G. 0.015(0.38) Max. 0.0 63(1. 60) Max. Collector 3 1. Emitter 0.050(1.270)TYP 2. Base 2 0.104(2.64) 0.096(2.44) Base 1 2 3 3. Collector 1 Dimensions in inches and (millimeter) Emitter Maximum Ratings (at TA=25C unless otherwise noted) Parameter Symbol Max Unit Min Collector-Base voltage -40 VCBO V Collector-Emitter voltage VCEO V -40 Emitter-Base voltage VEBO -5 V Collector Current-Continuous IC -0.2 A Collector Dissipation PC 0.625 W O TSTG , TJ Storage Temperature and Junction Temperature +150 -55 C REV:B QW-BTR05 Page 1 0.185(4.70) 0.169(4.30) 0.146(3.70) 0.130(3.30) 0.571(14.50) 0.555 (14.10)General Purpose Transistor Electrical Characteristics (at TA=25C unless otherwise noted) Symbol Parameter Conditions Min Max Unit Collector-Base breakdown voltage IC =-10 A , IE=0 V(BR)CBO -40 V Collector-Emitter breakdown voltage IC =-1mA , IB=0 V(BR)CEO -40 V Emitter-Base breakdown voltage IE =-10 A , IC=0 V(BR)EBO -5 V VCB=-40V , IE=0 -0.1 Collector cut-off current ICBO A A Collector cut-off current VCE=-30V , VBE(off)=-3V ICEX -50 VEB=-5V , IC=0 A Emitter cut-off current IEBO -0.1 hFE(1) VCE=-1V , IC=-10mA 100 400 VCE=-1V , IC=-50mA hFE(2) 60 DC current gain VCE=-1V , IC=-100mA hFE(3) 30 Collector-Emitter saturation voltage IC=-50mA , IB=-5mA -0.4 V VCE(sat) VBE(sat) Base-emitter saturation voltage IC=-50mA , IB=-5mA -0.95 V VCE=-20V , IC=-10mA 250 Transition frequency fT MHz f=100MHz Delay time VCC=-3V , VBE=-0.5V td 35 nS Rise time IC=-10mA , IB1=-1mA tr 35 nS Storage time VCC=-3V , IC=-10mA nS ts 225 Fall time IB1=IB2=-1mA tf 75 nS Classification of hFE(1) Rank O Y G Range 100-200 200-300 300-400 REV:B QW-BTR05 Page 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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