Small Surface Mount Transistor ABC846BPN-HF (NPN PNP) RoHS Device Halogen Free Features - Low collector capacitance. SOT-363 - Low collector-emitter saturation voltage. 0.087(2.20) - Reduces number of components and 0.079(2.00) board space. C1 B2 E2 - No mutual interference between the transistors. 0.053(1.35) 0.045(1.15) - AEC-Q101 Qualied. E1 B1 C2 0.028(0.70) 0.024(0.60) Mechanical data 0.006(0.15) 0.002(0.05) - Case: SOT-363, molded plastic. 0.004(0.10) 0.094(2.40) 0.001(0.02) 0.087(2.20) 0.041(1.05) 0.033(0.85) Circuit Diagram 0.014(0.35) 0.016(0.40) 0.006(0.15) 0.010(0.25) B :Base C1 B2 E2 E :Emitter C :Collector Dimensions in inches and (millimeters) E1 B1 C2 Maximum Ratings (Ta=25C unless otherwise noted) Symbol Parameter NPN PNP Unit Collector-base voltage VCBO 80 -80 V Collector-emitter voltage VCEO 65 -65 V Emitter-base voltage VEBO 6 -6 V Collector current-continuous IC 100 -100 mA Collector current-peak ICM 200 -200 mA Base current-peak IBM 200 -200 mA Power dissipation PD 200 mW Thermal resistance, junction to ambient R JA 625 C/W Ambient temperature range Tamb -55 to +150 C Junction and storage temperature range TJ, TSTG -65 to +150 C Company reserves the right to improve product design , functions and reliability without notice. REV:A AQW-JTR11 Page 1 Comchip Technology CO., LTD.Small Surface Mount Transistor Electrical Characteristics of TR1 NPN Transistor (Ta= 25C unless otherwise specied) Parameter Symbol Test Conditions Min. Typ. Max. Unit Collector-base breakdown voltage V(BR)CBO IC = 10A, IE = 0 80 V Collector-emitter breakdown voltage V(BR)CEO IC = 10mA, IB = 0 65 V Emitter-base breakdown voltage V(BR)EBO IE = 10A, IC = 0 6 V VCB = 50V, IE = 0 Collector cut-o current ICBO 15 nA VEB = 6V, IC = 0 nA Emitter cut-o current IEBO 100 VCE = 5V, IC = 10A 280 DC current gain hFE VCE = 5V, IC = 2mA 200 290 450 IC= 10mA , IB = 0.5mA 0.05 0.1 Collector-emitter saturation voltage VCE(sat) V IC= 100mA , IB = 5mA 0.2 0.3 IC = 10mA, IB = 0.5mA 0.755 0.85 Base-emitter saturation voltage VBE(sat) V IC = 100mA, IB = 5mA - 1 VCE = 5V, IC = 2mA 0.58 0.65 0.7 Base-emitter voltage VBE(on) V - - VCE = 5V, IC = 10mA 0.77 Transition frequency VCE = 5V, IC = 10mA, f = 100MHZ fT 100 MHZ Collector capacitance pF Cc VCB = 10V, f = 1MHZ 1.9 Emitter capacitance Ce VCB = 0.5V, f = 1MHZ 11 pF Electrical Characteristics of TR2 PNP Transistor (Ta= 25C unless otherwise specied) Symbol Parameter Test Conditions Min. Typ. Max. Unit Collector-base breakdown voltage V(BR)CBO IC = -10A, IE = 0 -80 V Collector-emitter breakdown voltage V(BR)CEO IC = -10mA, IB = 0 -65 V Emitter-base breakdown voltage V(BR)EBO IE = -10A, IC = 0 -6 V VCB = -50V, IE = 0 Collector cut-o current ICBO -15 nA VEB = -6V, IC = 0 nA Emitter cut-o current IEBO -100 VCE = -5V, IC = -10A 280 DC current gain hFE VCE = -5V, IC = -2mA 200 290 450 IC= -10mA , IB = -0.5mA -0.055 -0.1 Collector-emitter saturation voltage VCE(sat) V IC= -100mA , IB = -5mA -0.2 -0.3 IC = -10mA, IC = -0.5mA -0.755 -0.85 Base-emitter saturation voltage VBE(sat) V IC = -100mA, IC = -5mA - -0.9 VCE = -5V, IB = -2mA -0.6 -0.65 -0.75 Base-emitter on voltage VBE(on) V - - VCE = -5V, IB = -10mA -0.82 Transition frequency VCE = -5V, IC = -10mA, f = 100MHZ 100 fT MHZ Collector capacitance VCB = -10V, f = 1MHZ pF Cc 2.3 Emitter capacitance pF Ce VCB = -0.5V, f = 1MHZ 10 Company reserves the right to improve product design , functions and reliability without notice. REV:A AQW-JTR11 Page 2 Comchip Technology CO., LTD.