General Purpose Transistor ABC856AW-HF Thru. ABC858CW-HF (PNP) RoHS Device Halogen Free Features - For AF input stages and driver applications. SOT-323 1 :Base - High current gain. 2 :Emitter 3 :Collector 0.087(2.20) - Low collector-emitter saturation voltage. 0.079(2.00) - Low noise between 30Hz and 15kHz. 3 - AEC-Q101 Qualied. 0.053(1.35) 0.045(1.15) 1 2 0.055(1.40) 0.047(1.20) Mechanical data - Case: SOT-323, molded plastic. 0.006(0.15) 0.002(0.05) 0.004(0.10) 0.094(2.40) 0.001(0.02) 0.087(2.20) 0.043(1.10) 0.035(0.90) Circuit Diagram 0.014(0.35) 0.016(0.40) 3 Collector 0.006(0.15) 0.010(0.25) 1 Dimensions in inches and (millimeter) Base 2 Emitter Maximum Ratings (Ta=25C unless otherwise noted) Symbol Parameter Value Unit ABC856W-HF -80 Collector-base voltage ABC857W-HF VCBO -50 V ABC858W-HF -30 ABC856W-HF -65 Collector-emitter voltage ABC857W-HF VCEO -45 V ABC858W-HF -30 Emitter-base voltage VEBO -5 V Collector current-continuous IC -100 mA Peak collector current ICM -200 mA Peak base current IBM -200 mA Collector dissipation PC 200 mW Junction and storage temperature range TJ, TSTG -65 to +150 C Company reserves the right to improve product design , functions and reliability without notice. REV:A AQW-JTR10 Page 1 Comchip Technology CO., LTD.General Purpose Transistor Electrical Characteristics (Ta= 25C unless otherwise specied) Symbol Parameter Test Conditions Min. Typ. Max. Unit ABC856W-HF -80 Collector-base breakdown voltage IC = -10A, IE = 0 ABC857W-HF V(BR)CBO -50 V ABC858W-HF -30 ABC856W-HF -65 Collector-emitter breakdown voltage ABC857W-HF V(BR)CEO IC = -10mA, IB = 0 -45 V ABC858W-HF -30 Emitter-base breakdown voltage V(BR)EBO IE = -1A, IC = 0 -5 V VCB = -30V, IE = 0 Collector cut-o current ICBO -15 nA VEB = -5V, IC = 0 A Emitter cut-o current IEBO -0.1 ABC856AW, 857AW, 858AW 140 DC current gain ABC856BW, 857BW, 858BW VCE = -5V, IC = -10A hFE 250 ABC857CW, 858CW 480 ABC856AW, 857AW, 858AW 125 180 250 DC current gain ABC856BW, 857BW, 858BW VCE = -5V, IC = -2mA hFE 220 290 475 ABC857CW, 858CW 420 520 800 IC= -10mA , IB = -0.5mA -0.075 -0.3 Collector-emitter saturation voltage VCE(sat) V IC= -100mA , IB = -5mA -0.25 -0.65 IC = -10mA, IB = -0.5mA -0.7 Base-emitter saturation voltage VBE(sat) V IC = -100mA, IB = -5mA -0.85 IC = -2mA, VCE = 5V -0.6 -0.75 Base-emitter voltage VBE(on) V IC = -10mA, VCE = 5V - -0.82 Transition frequency VCE = -5V, IC = -20mA, f = 100MHZ fT 250 MHZ Collector-base capacitance VCB = -10V, f = 1MHZ pF Ccb 3 5 Emitter-base capacitance pF Ceb VEB = -0.5V, f = 1MHZ 10 15 Rating and Characteristic Curves (ABC856AW-HF Thru. ABC858CW-HF) Fig.1 - Total Power Dissipation Fig.2 - Collector-Base Capacitance Emitter-Base Capacitance 300 12 250 10 200 8 CEB 150 6 100 4 CCB 50 2 0 0 0 20 40 60 80 100 120 150 TS, (C) VCBO (VEBO), (V) Company reserves the right to improve product design , functions and reliability without notice. REV:A AQW-JTR10 Page 2 Comchip Technology CO., LTD. Ptot, (mW) CCBO (CEBO), (pF)