General Purpose Transistors BC817-16-G/25-G/40-G (NPN) RoHS Device Features SOT-23 - For general AF applications. - High collector current. 0.119(3.00) - High current gain. 0.110(2.80) - Low collector-emitter saturation voltage. 3 0.056(1.40) 0.047(1.20) 1 2 Marking: 0.079(2.00) 0.071(1.80) BC817-16-G: 6A BC817-25-G: 6B BC817-40-G: 6C 0.006(0.15) 0.003(0.08) 0.045(1.15) 0.100(2.55) 0.035(0.90) 0.089(2.25) Diagram: 0.004(0.10) max 0.020(0.50) 0.020(0.50) 0.012(0.30) Collector 0.012(0.30) 3 1 Base Dimensions in inches and (millimeter) 2 Emitter Maximum Ratings (at TA=25C unless otherwise noted) Symbol Parameter Value Unit Collector-Base voltage VCBO 50 V Collector-Emitter voltage VCEO 45 V Emitter-Base voltage VEBO 5 V Collector current-continuous IC 500 mA Collector power dissipation 300 PC mW Junction and storage temperature range TJ, TSTG -55 to +150 C Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-BTR28 Page 1 Comchip Technology CO., LTD.General Purpose Transistors Electrical Characteristics (at TA=25C unless otherwise noted) Symbol Typ Parameter Conditions Min Max Unit Collector-Base breakdown voltage IC = 10 A, IE = 0 V(BR)CBO 50 V Collector-Emitter breakdown voltage V(BR)CEO IC = 10mA, IB = 0 45 V Emitter-Base breakdown voltage V(BR)EBO IE = 1A, IC = 0 5 V VCB = 45V, IE = 0 A Collector cut-off current ICBO 0.1 A Emitter cut-off current IEBO VEB = 4V, IC = 0 0.1 hFE(1) VCE = 1V, IC = 100mA 100 600 DC current gain hFE(2) VCE = 1V, IC = 500mA 40 Collector-Emitter saturation voltage VCE(SAT) IC = 500mA, IB = 50mA 0.7 V Base-Emitter saturation voltage VBE(SAT) IC = 500mA, IB = 50mA 1.2 V Base-Emitter voltage VBE(ON) VCE = 1V, IC = 500mA 1.2 V Collector capacitance Cob VCB = 10V, f = 100MHz 10 pF Transition frequency VCE = 5V, IC = 10mA, f = 100MHz fT 100 MHz Classification of hFE(1) Rank BC817-16-G BC817-25-G BC817-40-G Range 100-250 160-400 250-600 RATING AND CHARACTERISTIC CURVES (BC817-16-G/25-G/40-G) Fig.2 - hFE IC Fig.1 - Static Characteristic 500 280 COMMON 1mA EMITTER Ta=100C 0.9mA Ta = 25C 240 400 0.8mA 0.7mA 200 300 Ta=25C 0.6mA 160 0.5mA 120 0.4mA 200 0.3mA 80 0.2mA 40 IB=0.1mA VCE=1V 0 100 0 2 4 6 8 10 12 14 16 1 10 100 500 Collector-Emitter Voltage, VCE (V) Collector Current, IC (mA) Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-BTR28 Page 2 Comchip Technology CO., LTD. Collector Current, IC (mA) DC Current Gain, hFE