COMCHIP Small Signal Transistor SMD Diodes Specialist BC846AW-G Thru. BC848CW-G (NPN) RoHS Device Features -Power dissipation O PCM: 0.15W ( TA=25 C) SOT-323 -Collector current ICM: 0.1A 0.087 (2.20) -Collector-base voltage 0.079 (2.00) VCBO: BC846W=80V 3 BC847W=50V 0.053(1.35) BC848W=30V 0.045(1.15) -Operating and storage junction temperature O 1 2 range: TJ, TSTG= -55 to +150 C 0.006 (0.15) 0.055 (1.40) 0.003 (0.08) 0.047 (1.20) Mechanical data 0.039 (1.00) 0.096 (2.45) -Case: SOT-323, molded plastic. 0.085 (2.15) 0.035 (0.90) -Terminals: solderable per MIL-STD-750, method 2026. -Approx. weight: 0.008 grams 0.004 (0.10) max 0.016 (0.40) 0.018 (0.46) 0.008 (0.20) Circuit diagram 0.010 (0.26) -1.BASE -2.EMITTER 3 Dimensions in inches and (millimeter) -3.COLLECTOR 1 2 O Maximum Ratings (at Ta=25 C unless otherwise noted) Symbol Parameter Value Units 80 BC846W-G Collector-Base Voltage VCBO 50 V BC847W-G BC848W-G 30 65 BC846W-G Collector-Emitter Voltage VCEO 45 V BC847W-G 30 BC848W-G 6 BC846W-G / BC847W-G Emitter-Base Voltage VEBO V BC848W-G 5 Collector Current -Continuous IC 0.1 A Collector Power Dissipation PC 150 mW O Junction Temperature TJ 150 C O Storage Temperature Range TSTG -55 to +150 C REV:A QW-BTR35 Page 1 Comchip Technology CO., LTD.COMCHIP Small Signal Transistor SMD Diodes Specialist Electrical Characteristics O (BC846AW-G Thru. BC848CW-G, TA= 25 C unless otherwise specified) Symbol Parameter Test Conditions MIN TYP MAX Units BC846W-G 80 Collector-Base Breakdown Voltage IC =10 A , IE=0 BC847W-G VCBO 50 V 30 BC848W-G BC846W-G 65 Collector-Emitter Breakdown Voltage IC =10mA , IB=0 BC846W-G VCEO 45 V 30 BC848W-G Emitter-Base Break Voltage BC846W-G, BC847W-G 6 IE =10A , IC=0 VEBO V BC848W-G 5 ICBO VCB=30V 15 nA Collector Cutoff Current DC Current Gain BC846AW,847AW,848AW 90 VCE =5V , IC=10 A BC846BW,847BW,848BW 150 BC847CW,848CW 270 hFE BC846AW,847AW,848A 1W 22010 VCE =5V , IC=2mA BC846BW,847BW,848BW 200 450 BC847CW,848CW 420 800 IC =10mA 0.25 , IB=0.5mA Collector-Emitter Saturation Voltage VCE(sat) V IC =100mA , IB=0.5mA 0.60 0.7 IC =10mA , IB=0.5mA Base-Emitter Saturation Voltage VBE(sat) V IC =100mA , IB=5mA 0.9 VCE =5V , IC=2mA 580 660 700 Base-Emitter Voltage VBE(on) mV VCE =5V , IC=10mA 770 VCE=5V , IC=10mA Transition Frequency 100 MHZ fT f=100MHZ Collector Output Capacitance Cob VCB =10V , f=1MHZ 4.5 pF Noise Figure BC846AW,847AW,848AW VCE =5V , IC=0.2mA NF f =1KHZ , RS=2K BC846BW,847BW,848BW 10 dB BC847CW,848CW BW=200Hz 4 REV:A QW-BTR35 Page 2 Comchip Technology CO., LTD.