Small Signal Transistor BC846W-G Thru. BC848W-G (NPN) RoHS Device Features - Power dissipation PCM: 0.15W ( TA=25C) - Collector current SOT-323 ICM: 0.1A - Collector-base voltage 0.087(2.20) 0.079(2.00) VCBO: BC846W=80V BC847W=50V 3 BC848W=30V 0.053(1.35) 0.045(1.15) 1 2 Mechanical data 0.055(1.40) 0.047(1.20) - Case: SOT-323, molded plastic. 0.006(0.15) - Terminals: solderable per MIL-STD-750, 0.003(0.08) method 2026. 0.043(1.10) - Approx. weight: 0.008 grams 0.096(2.45) 0.035(0.90) 0.085(2.15) Circuit diagram 0.004(0.10) - 1.BASE 0.016(0.40) 0.000(0.00) 0.008(0.20) 0.018(0.46) - 2.EMITTER 0.010(0.26) 3 - 3.COLLECTOR Dimensions in inches and (millimeter) 1 2 Maximum Ratings (at TA=25C unless otherwise noted) Symbol Parameter Value Units BC846W-G 80 Collector-Base voltage VCBO 50 V BC847W-G 30 BC848W-G BC846W-G 65 Collector-Emitter voltage BC847W-G VCEO 45 V 30 BC848W-G 6 BC846W-G / BC847W-G Emitter-Base voltage VEBO V BC848W-G 5 IC 0.1 A Collector current -continuous Collector power dissipation PC 150 mW Thermal resistance from junction to ambient RJA 833 C/W Junction temperature range TJ 150 C Storage temperature range TSTG -55 to +150 C Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-BTR35 Page 1 Comchip Technology CO., LTD.Small Signal Transistor Electrical Characteristics (at TA=25C unless otherwise noted) Parameter Symbol Test Conditions MIN TYP MAX Unit 80 BC846W-G IC = 10A , IE = 0 Collector-base breakdown voltage BC847W-G VCBO 50 V BC848W-G 30 BC846W-G 65 Collector-emitter breakdown voltage BC847W-G VCEO IC = 10mA , IB = 0 45 V BC848W-G 30 Emitter-base break voltage BC846W-G, BC847W-G 6 IE = 1A , IC = 0 VEBO V BC848W-G 5 Collector cutoff current ICBO VCB = 30V 15 nA DC current gain BC846AW-G, 847AW-G, 848AW-G 90 VCE = 5V , IC = 10 A BC846BW-G, 847BW-G, 848BW-G 150 BC847CW-G, 848CW-G 270 hFE BC846AW-G, 847AW-G, 848A 1W-G 22010 VCE = 5V , IC = 2mA BC846BW-G, 847BW-G, 848BW 200-G 450 BC847CW-G, 848CW-G 420 800 IC = 10mA 0.25 , IB = 0.5mA Collector-emitter saturation voltage VCE(sat) V IC = 100mA ,IB = 5mA 0.60 IC = 10mA , IB = 0.5mA 0.7 Base-emitter saturation voltage VBE(sat) V IC = 100mA , IB = 5mA 0.9 VCE = 5V , IC = 2mA 580 660 700 Base-emitter voltage VBE(on) mV VCE = 5V , IC = 10mA 770 VCE = 5V , IC = 10mA Transition frequency fT 100 MHZ f = 100MHZ Collector output capacitance VCB = 10V , f = 1MHZ pF Cob 4.5 Noise figure BC846AW-G, 847AW-G, 848AW-G VCE = 5V , I 10C = 0.2mA BC846BW-G, 847BW-G, 848BW-G f = 1KH 10Z , RS = 2K NF dB BC847CW-G, 848CW-G BW = 200Hz 4 Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-BTR35 Page 2 Comchip Technology CO., LTD.