Small Signal Transistor BC846A-G Thru. BC848C-G (NPN) RoHS Device Features - Power dissipation SOT-23 PCM: 0.20W ( TA=25C) - Collector current ICM: 0.1A 0.118(3.00) 0.110(2.80) - Collector-base voltage 3 VCBO: BC846=80V 0.055(1.40) BC847=50V 0.047(1.20) BC848=30V 1 2 0.079(2.00) - Operating and storage junction temperature 0.071(1.80) range: TJ, TSTG= -65 to +150C 0.006(0.15) 0.003(0.08) 0.041(1.05) 0.100(2.55) Mechanical data 0.035(0.90) 0.089(2.25) - Case: SOT-23, molded plastic. - Terminals: solderable per MIL-STD-750, 0.004(0.10) max method 2026. 0.020(0.50) 0.020(0.50) 0.012(0.30) 0.012(0.30) - Weight: 0.008 grams (approx.). Dimensions in inches and (millimeter) Circuit Diagram -1.BASE -2.EMITTER 3 -3.COLLECTOR 1 2 Maximum Ratings (at Ta=25C unless otherwise noted) Symbol Parameter Value UNIT BC846-G 80 Collector-base voltage BC847-G VCBO 50 V BC848-G 30 BC846-G 65 Collector-emitter voltage BC847-G VCEO 45 V BC848-G 30 Emitter-base voltage VEBO 6 V Collector current-continuous IC 0.1 A Collector power dissipation PC 200 mW Junction temperature TJ 150 C Storage temperature range C TSTG -65 to +150 Company reserves the right to improve product design , functions and reliability without notice. REV:C QW-BTR31 Page 1 Comchip Technology CO., LTD.Small Signal Transistor Electrical Characteristics (BC846A-G Thru. BC848C-G, TA= 25 C unless otherwise specied) Parameter Symbol Test Conditions MIN TYP MAX Unit 80 BC846-G Collector-base breakdown voltage VCBO IC = 10A, IE = 0 50 BC847-G V BC848-G 30 BC846-G 65 BC847-GCollector-emitter breakdown voltage VCEO IC = 10mA, IB = 0 45 V BC848-G 30 Emitter-base break voltage IE = 10A, IC = 0 VEBO 6 V BC846-G VCB = 70V, IE = 0 VCB = 50V, IE = 0 A BC847-GCollector cut-o current ICBO 0.1 VCB = 30V, IE = 0 BC848-G BC846-G VCB = 60V, IE = 0 ICEO VCB = 45V, IE = 0 0.1 A BC847-GCollector cut-o current VCB = 30V, IE = 0 BC848-G VEB = 5V, IC = 0 A Emitter cut-o current IEBO 0.1 BC846A,BC847A,BC848A 1 22010 DC current gain BC846B,BC847B,BC848B 200hFE 450VCE = 5V, IC = 2mA BC847C,BC848C 420 800 Collector-emitter saturation voltage VCE(sat) IC = 100mA, IB = 5mA 0.5 V VBE(sat) IC = 100mA, IB = 5mA Base-emitter saturation voltage 1.1 V VCE = 5V, IC = 10mA Transition frequency 100 fT MHZ f = 100MHZ Collector output capacitance Cob VCB = 10V, f = 1MHZ 4.5 pF Company reserves the right to improve product design , functions and reliability without notice. REV:C QW-BTR31 Page 2 Comchip Technology CO., LTD.