General Purpose Transistor BC856-HF Thru. BC858-HF Series (PNP) RoHS Device Halogen Free Features - Ideally suited for automatic insertion SOT-23 - Power dissipation PCM: 0.25W ( TA=25C) 0.122(3.10) 0.106(2.70) - Low current.(max. 100mA) 3 - Collector-base voltage 0.059(1.50) 0.043(1.10) VCBO: BC856 = -80V BC857 = -50V 1 2 BC858 = -30V 0.079(2.00) 0.071(1.80) - Operating and storage junction temperature range: TJ, TSTG= -65 to +150C 0.004(0.10) Typ. 0.039(1.00) 0.102(2.60) Typ. 0.087(2.20) Mechanical data - Case: SOT-23, molded plastic. 0.004(0.10) - Terminals: Solderable per MIL-STD-750, 0.016(0.40) 0.001(0.02) Typ. method 2026. Circuit diagram Dimensions in inches and (millimeter) 3 - 1.BASE - 2.EMITTER - 3.COLLECTOR 1 2 Maximum Ratings (at Ta=25C unless otherwise noted) Symbol Parameter Value Unit BC856 -80 Collector-Base voltage BC857 VCBO -50 V BC858 -30 BC856 -65 Collector-Emitter voltage BC857 VCEO -45 V BC858 -30 Emitter-Base voltage VEBO -5 V Collector current-continuous IC -0.1 A Collector dissipation PC 250 mW Junction temperature range TJ -65 to +150 C Storage temperature range TSTG -65 to +150 C Company reserves the right to improve product design , functions and reliability without notice. REV:A Page 1 QW-JTR16 Comchip Technology CO., LTD.General Purpose Transistor Electrical Characteristics (TA= 25C unless otherwise specified) Parameter Symbol Unit Test Conditions MIN TYP MAX BC856 -80 Collector-Base breakdown voltage IC = -10A , IE=0 BC857 V(BR)CBO -50 V BC858 -30 BC856 -65 Collector-Emitter breakdown voltage BC857 V(BR)CEO IC = -10mA , IB=0 -45 V BC858 -30 Emitter-Base breakdown voltage V(BR)EBO IE = -1A , IC=0 -5 V Collector cut-off current ICBO VCB= -30V , IE=0 -1 -15 nA VEB= -5V , IC=0 A Emitter cut-off current IEBO -0.1 BC856A ,857A ,858A 125 250 DC current gain BC856B ,857B ,858B hFE V CE = -5V , IC= -2.2mA 220 475 BC857C ,858C 420 800 IC =-100mA , IB=-5mA -0.65 Collector-Emitter saturation voltage VCE(sat) V IC =-10mA , IB=-0.5mA -0.3 IC =-10mA , IB=-0.5mA -0.7 Base-Emitter saturation voltage VBE(sat) V IC =-100mA , IB=-5mA -0.85 IC =-2mA , VCE=-5V -0.6 -0.65 -0.75 Base-Emitter voltage VBE(on) V IC =-10mA , VCE=-5V -0.82 VCB =-10V , IE=Ie=0 Collector capacitance pF CC 4.5 f=1MHZ IC=-200uA,VCE=-5V Transition frequency F RS=2k ,f=1kHz, 2 10 dB B=200Hz VCE=-5V, IC=-10mA Transition frequency 100 fT MHZ f=100MHZ Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-JTR16 Page 2 Comchip Technology CO., LTD.